AP60T03AH Advanced Power Electronics Corp., AP60T03AH Datasheet

AP60T03AH

Manufacturer Part Number
AP60T03AH
Description
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP60T03AH

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
12
Rds(on) / Max(m?) Vgs@4.5v
25
Qg (nc)
11.6
Qgs (nc)
3.9
Qgd (nc)
7
Id(a)
45
Pd(w)
44
Configuration
Single N
Package
TO-252
▼ ▼ ▼ ▼ Simple Drive Requirement
▼ ▼ ▼ ▼ Low Gate Charge
▼ ▼ ▼ ▼ Fast Switching
V
V
I
I
I
P
T
T
Rthj-c
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP60T03AJ) are available for low-profile applications.
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D
D
DM
STG
J
DS
GS
D
@T
@T
@T
C
C
Symbol
Symbol
C
=25℃
=100℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Parameter
Parameter
1
G
GS
GS
@ 10V
@ 10V
D
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Max.
Max.
-55 to 175
-55 to 175
Rating
BV
R
I
0.352
D
±20
120
30
45
32
44
DS(ON)
G
DSS
D
Value
AP60T03AH/J
110
S
3.4
G D
S
TO-252(H)
TO-251(J)
12mΩ
Units
W/℃
Units
℃/W
℃/W
30V
45A
200909033
W
V
V
A
A
A

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AP60T03AH Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter @ 10V GS @ 10V GS 1 Parameter AP60T03AH/J BV 30V DSS R 12mΩ DS(ON) I 45A TO-252( TO-251(J) S Rating Units 30 ± ...

Page 2

... AP60T03AH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... V =4. 4.0 0.0 Fig 2. Typical Output Characteristics 2 I =15A D V =25 ℃ ℃ ℃ ℃ C 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance 2.8 2.3 1 1.3 0.8 0.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. AP60T03AH/J 10V o C 8.0V 6.0V 5.0V V =4.0V G 1.0 2.0 3.0 4 Drain-to-Source Voltage (V) DS =20A D =10V G 25 100 Junction Temperature ( C) j v.s. Junction Temperature 25 100 o T ...

Page 4

... AP60T03AH =20A D V =16V DS V =20V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 = Single Pulse 1 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area ...

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