AP4835GM Advanced Power Electronics Corp., AP4835GM Datasheet - Page 4

• Manufacturer Part Number: AP4835GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4835GM

• Vds: -30V
• Vgs: ±25V
• Rds(on) / Max(m?) Vgs@10v: 20
• Rds(on) / Max(m?) Vgs@4.5v: 35
• Qg (nc): 15
• Qgs (nc): 2.8
• Qgd (nc): 8
• Id(a): -9.2
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

AP4835GM
100.00
10.00
1.00
0.10
0.01
16
12
40
30
20
10
0
8
4
0
0.1
0
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
V
V
I
DS
Single Pulse
DS
D
T
= -7A
= -15V
=-5V
A
1
=25
-V
-V
Q
GS
10
o
DS
G
C
, Gate-to-Source Voltage (V)
T
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
2
1
j
=25
o
C
20
3
T
j
=150
10
4
30
o
C
100ms
5
100us
10ms
1ms
DC
1s
100
40
6
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
Fig 12. Gate Charge Circuit
-4.5V
Duty factor=0.5
V
0.2
0.1
0.05
0.01
0.02
G
5
Single Pulse
0.001
-V
Q
GS
DS
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.01
Q
Q
13
G
Charge
GD
0.1
17
P
DM
1
Duty factor = t/T
Peak T
R
thja
21
= 125℃/W
t
j
= P
T
DM
f=1.0MHz
x R
10
25
thja
+ T
C
C
C
Q
a
oss
iss
rss
100
29
4