AP4813GSM-HF Advanced Power Electronics Corp., AP4813GSM-HF Datasheet - Page 4

• Manufacturer Part Number: AP4813GSM-HF
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4813GSM-HF

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 9
• Rds(on) / Max(m?) Vgs@4.5v: 15
• Qg (nc): 11.5
• Qgs (nc): 2.5
• Qgd (nc): 7
• Id(a): 13
• Pd(w): 2.5
• Configuration: Single N
• Package: SO-8

AP4813GSM-HF
0.01
100
0.1
10
10
1
8
6
4
2
0
0.01
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
Operation in this
I
area limited by
Single Pulse
V
90%
10%
T
V
D
R
DS
DS(ON)
= 8 A
A
GS
=25
4
V
o
V
0.1
DS
Q
V
C
t
DS
d(on)
DS
V
G
= 15 V
DS
, Total Gate Charge (nC)
= 18 V
, Drain-to-Source Voltage (V)
8
= 24 V
t
r
12
1
16
t
d(off)
10
t
f
20
100ms
100us
10ms
1ms
DC
1s
24
100
Fig 10. Effective Transient Thermal Impedance
1600
1200
0.001
800
400
0.01
0.1
0
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
4.5V
Fig 12. Gate Charge Waveform
V
Duty factor=0.5
G
0.001
0.02
0.01
5
0.05
0.1
0.2
Single Pulse
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
Charge
G
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
10
thja
21
= 125℃/W
j
= P
t
DM
T
f=1.0MHz
x R
100
25
thja
Q
+ T
C
C
C
a
rss
iss
oss
1000
29
4