AP4500GM Advanced Power Electronics Corp., AP4500GM Datasheet - Page 5

• Manufacturer Part Number: AP4500GM
• Description: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost- effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4500GM

• Vds: 20V
• Vgs: ±12V
• Rds(on) / Max(m?) Vgs@4.5v: 30
• Rds(on) / Max(m?) Vgs@2.5v: 45
• Qg (nc): 10
• Qgs (nc): 1.1
• Qgd (nc): 4.1
• Id(a): 6
• Pd(w): 2
• Configuration: Complementary N-P
• Package: SO-8

N-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.01
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Single Pulse
I
V
Operation in this
T
D
area limited by
DS
V
90%
10%
V
A
= 6 A
R
DS
= 24 V
DS(ON)
=25
GS
o
V
C
DS
Q
0.1
8
t
d(on)
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
t
r
16
1
t
d(off)
10
24
t
f
100us
1ms
10ms
100ms
1s
DC
100
32
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
Duty factor=0.5
V
0.02
0.01
0.05
0.1
0.2
0.001
G
5
Single Pulse
V
Q
DS
GS
0.01
, Drain-to-Source Voltage (V)
9
t , Pulse Width (s)
Q
Q
0.1
G
GD
Charge
-30
13
1
17
AP4500GM
P
DM
Duty factor = t/T
Peak T
R
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
21
T
x R
C
100
C
C
thja
iss
+ T
oss
rss
Q
a
1000
25
5