AP4435GYT-HF Advanced Power Electronics Corp., AP4435GYT-HF Datasheet
AP4435GYT-HF
Specifications of AP4435GYT-HF
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AP4435GYT-HF Summary of contents
Page 1
... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4435GYT-HF Halogen-Free Product BV -30V DSS R 21mΩ DS(ON) I -11A ® ...
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... AP4435GYT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 1.6 I =-10A D V =-10V G 1.4 1.2 1.0 0.8 0.6 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1 0.8 0.6 0.4 -50 1 1.2 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4435GYT-HF o -10V T = 150 C A -7.0V -5.0V -4. -3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 150 ...
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... AP4435GYT- - Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited by R DS( Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...