AP4413GM Advanced Power Electronics Corp., AP4413GM Datasheet - Page 4

• Manufacturer Part Number: AP4413GM
• Description: The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP4413GM

• Vds: -20V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 30
• Rds(on) / Max(m?) Vgs@4.5v: 40
• Rds(on) / Max(m?) Vgs@2.5v: 65
• Qg (nc): 17
• Qgs (nc): 4
• Qgd (nc): 7
• Id(a): -7.8
• Pd(w): 2.5
• Configuration: Single P
• Package: SO-8

AP4413GM
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 11. Switching Time Waveform
Fig 9. Maximum Safe Operating Area
V
90%
10%
V
Single Pulse
DS
T
GS
A
V
I
=25
-V
DS
D
= -7A
= -16V
DS
10
Q
t
o
d(on)
C
G
, Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
1
t
r
20
10
t
d(off)
30
t
f
100ms
10ms
1ms
DC
1s
100
40
Fig 10. Effective Transient Thermal Impedance
10000
0.001
1000
0.01
100
0.1
0.0001
1
1
Fig 8. Typical Capacitance Characteristics
-4.5V
Fig 12. Gate Charge Waveform
V
0.001
G
Duty factor=0.5
0.02
0.01
0.05
5
0.1
Single Pulse
0.2
-V
Q
DS
GS
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
0.01
9
Q
0.1
Q
13
Charge
G
GD
17
1
P
DM
10
21
Duty factor = t/T
Peak T
R
thja
=125
t
f=1.0MHz
j
= P
o
C/W
T
DM
100
25
x R
thja
C
C
C
Q
+ T
iss
oss
rss
a
1000
29