AP4226AGM Advanced Power Electronics Corp., AP4226AGM Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness

AP4226AGM

Manufacturer Part Number
AP4226AGM
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP4226AGM

Vds
30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
18
Rds(on) / Max(m?) Vgs@4.5v
24
Qg (nc)
10
Qgs (nc)
2.3
Qgd (nc)
5
Id(a)
8.7
Pd(w)
2
Configuration
Dual N
Package
SO-8

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4226AGM
Manufacturer:
APEC
Quantity:
25 000
Part Number:
AP4226AGM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP4226AGM-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Low On-Resistance
▼ Simple Drive Requirement
▼ Dual N MOSFET Package
V
V
I
I
I
P
T
T
Rthj-a
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
The SO-8 package is widely preferred for commercial-
industrial surface mount applications and suited for low
voltage applications such as DC/DC converters.
D
D
DM
DS
GS
D
STG
J
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
D1
3
3
D1
SO-8
D2
D2
S1
G1
S2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
G2
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+20
8.7
30
40
DS(ON)
7
2
DSS
Value
62.5
S1
D1
AP4226AGM
G2
18mΩ
200812093
8.7A
Units
W/℃
℃/W
30V
Unit
W
V
V
A
A
A
D2
S2
1

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AP4226AGM Summary of contents

Page 1

... Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S1 Parameter Parameter 3 AP4226AGM RoHS-compliant Product BV 30V DSS R 18mΩ DS(ON Rating Units 30 +20 8 ...

Page 2

... AP4226AGM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10V G 1.4 0.9 0 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 = 1.2 0.8 0.4 0.0 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4226AGM 150 7.0 V 6 =3. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 o ...

Page 4

... AP4226AGM Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 ...

Page 5

... ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4226AGM YWWSSS SYMBOLS α A 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Number Package Code ...

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