AP4232BGM-HF Advanced Power Electronics Corp., AP4232BGM-HF Datasheet
AP4232BGM-HF
Specifications of AP4232BGM-HF
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AP4232BGM-HF Summary of contents
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... Storage Temperature Range STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP4232BGM-HF Halogen-Free Product BV 30V DSS R 22mΩ DS(ON ...
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... AP4232BGM-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time d(on) t Rise Time ...
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... Fig 2. Typical Output Characteristics 2 =10V G 1.6 1.2 0.8 0.4 10 -50 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 1.2 1.0 o =25 C 0.8 0.6 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4232BGM-HF o 10V T = 150 C A 7.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( 100 ...
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... AP4232BGM- =15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Operation in this area limited DS(ON Single Pulse 0.01 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% ...