AP3403GH Advanced Power Electronics Corp., AP3403GH Datasheet
AP3403GH
Manufacturer Part Number
AP3403GH
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter 1 Parameter AP3403GH/J Pb Free Plating Product BV -30V DSS R 200mΩ DS(ON 10A TO-252( ...
... AP3403GH/J Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
... -10V c G 1.4 1.2 1 0.8 0.6 - Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.3 1.5 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3403GH/J o -10V C -8.0V -6.0V -5.0V V =-4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( ...
... AP3403GH =-10A D V =-24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 = Single Pulse Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area -10 V Fig11. Switching Time Circuit ...