AP2605GY Advanced Power Electronics Corp., AP2605GY Datasheet - Page 4

• Manufacturer Part Number: AP2605GY
• Description: Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP2605GY

• Vds: -30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 80
• Rds(on) / Max(m?) Vgs@4.5v: 120
• Qg (nc): 5.5
• Qgs (nc): 1
• Qgd (nc): 2.6
• Id(a): -4
• Pd(w): 2
• Configuration: Single P
• Package: SOT-26

AP2605GY-HF
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
90%
10%
V
Single Pulse
V
T
GS
DS
V
A
I
=25
DS
D
2
=-4A
=-24V
-V
Q
o
C
G
t
DS
d(on)
, Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
4
1
t
r
6
10
8
t
d(off)
t
f
10
100ms
10ms
1ms
DC
1s
100
12
Fig 10. Effective Transient Thermal Impedance
0.001
1000
0.01
100
0.1
10
1
0.0001
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
V
0.01
0.05
Duty factor=0.5
0.001
G
0.1
5
0.2
Single Pulse
Q
-V
GS
DS
0.01
9
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
Q
13
0.1
Q
G
Charge
GD
17
1
P
DM
Duty factor = t/T
Peak T
R
21
10
thja
t
= 156℃/W
j
f=1.0MHz
= P
T
DM
x R
100
25
thja
C
C
C
+ T
Q
oss
rss
iss
a
1000
29
4