AP2533GY-HF Advanced Power Electronics Corp., AP2533GY-HF Datasheet - Page 2
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AP2533GY-HF
Manufacturer Part Number
AP2533GY-HF
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device
Manufacturer
Advanced Power Electronics Corp.
Datasheet
1.AP2533GY-HF.pdf
(7 pages)
Specifications of AP2533GY-HF
Vds
16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@10v
150
Rds(on) / Max(m?) Vgs@4.5v
230
Rds(on) / Max(m?) Vgs@2.5v
450
Qg (nc)
6.5
Qgs (nc)
0.5
Qgd (nc)
1.5
Id(a)
2.2
Pd(w)
1.14
Configuration
Complementary N-P
Package
OT-26
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2533GY-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
BV
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
V
N-CH Electrical Characteristics@T
Source-Drain Diode
AP2533GY-HF
DSS
GSS
d(on)
r
d(off)
f
fs
GS(th)
SD
DS(ON)
iss
oss
rss
g
gs
gd
DSS
Symbol
Symbol
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward On Voltage
Parameter
Parameter
2
2
2
j
2
=25
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
f=1.0MHz
I
D
D
S
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
DS
GS
GS
DS
G
=2A
=1A
=0.9A, V
o
=3.3Ω
C(unless otherwise specified)
=V
=5V, I
=12V, V
=10V
=10V
=16V
=0V, I
=4.5V, I
=2.5V, I
=1.8V, I
=+8V, V
=4.5V
=5V
=0V
GS
Test Conditions
Test Conditions
, I
D
D
GS
D
=250uA
=2A
D
D
D
=250uA
GS
DS
=0V
=2A
=1.5A
=0.5A
=0V
=0V
Min.
Min.
0.2
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
350
6.5
0.5
1.5
15
18
70
60
8
8
4
-
-
-
-
-
-
-
-
+100
Max. Units
Max. Units
10.4
150
230
450
560
1.2
1
1
-
-
-
-
-
-
-
-
-
-
mΩ
mΩ
mΩ
nC
nC
nC
uA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
2