AP2313GN Advanced Power Electronics Corp., AP2313GN Datasheet
AP2313GN
Specifications of AP2313GN
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AP2313GN Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D SOT-23 G Parameter Parameter 3 AP2313GN RoHS-compliant Product BV -20V DSS R 160mΩ DS(ON) I -2. Rating Units -20 +12 -2 ...
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... AP2313GN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV /ΔT Breakdown Voltage Temperature Coefficient DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...
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... Fig 2. Typical Output Characteristics 1.6 =- 1.4 = 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance 1 0.8 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. AP2313GN -5.0V o -4.5V C -3.5V -2. Drain-to-Source Voltage ( 2 -4. 100 Junction Temperature ( C) j v.s. Junction Temperature 0 50 100 ...
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... AP2313GN =-16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 =25 C 0.1 A Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...