AP1801GU Advanced Power Electronics Corp., AP1801GU Datasheet

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... Thermal Data Symbol Rthj-a Thermal Resistance Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET 2021-8 Parameter 3 3 1,2 Parameter 3 AP1801GU Pb Free Plating Product BV -20V DSS R 70mΩ DS(ON Rating -20 ±12 -4 -3.3 20 1.6 0.013 W/℃ ...

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... AP1801GU Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

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... 4. 1.2 1.0 0.8 0 -50 T Fig 4. Normalized On-Resistance v.s. Junction Temperature 1 0.8 0.4 1 1.2 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1801GU -5. -4.5V -3.5V -2. -1 Drain-to-Source Voltage ( 100 150 o , Junction Temperature ( 100 150 Junction Temperature ( ...

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... AP1801GU =-16V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area Gate-to-Source Voltage (V) GS Fig 11 ...