AP2307GN-HF Advanced Power Electronics Corp., AP2307GN-HF Datasheet - Page 3

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2307GN-HF

Manufacturer Part Number
AP2307GN-HF
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2307GN-HF

Vds
-16V
Vgs
±8V
Rds(on) / Max(m?) Vgs@4.5v
60
Rds(on) / Max(m?) Vgs@2.5v
70
Rds(on) / Max(m?) Vgs@1.8v
90
Qg (nc)
15
Qgs (nc)
1.3
Qgd (nc)
4
Id(a)
-4
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2307GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
16
14
12
10
70
60
50
40
3
2
1
0
8
6
4
2
0
0
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
1
0
Fig 5. Forward Characteristic of
T
A
-V
-V
=25
T
-V
0.2
Reverse Diode
GS
j
SD
=150
o
DS
, Gate-to-Source Voltage (V)
2
3
C
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
o
C
0.4
4
5
T
I
A
0.6
D
=25
=-3A
o
C
T
V
6
7
j
=25
G
0.8
= - 1.8 V
-5.0V
-4.5V
-3.0V
-2.5V
o
C
1
8
9
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
8
6
4
2
0
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
G
T
D
= -4.5V
= - 4 A
A
= 150
T
-V
v.s. Junction Temperature
T
Junction Temperature
j
DS
, Junction Temperature (
j
0
2
0
, Junction Temperature (
o
, Drain-to-Source Voltage (V)
C
50
50
4
AP2307GN-HF
o
V
100
100
C)
6
o
G
C)
= - 1.8 V
-5.0V
-4.5V
-3.0V
-2.5V
150
150
8
3

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