AP2303GN Advanced Power Electronics Corp., AP2303GN Datasheet

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness

AP2303GN

Manufacturer Part Number
AP2303GN
Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,low on-resistance and cost-effectiveness
Manufacturer
Advanced Power Electronics Corp.
Datasheet

Specifications of AP2303GN

Vds
-30V
Vgs
±20V
Rds(on) / Max(m?) Vgs@10v
240
Rds(on) / Max(m?) Vgs@4.5v
460
Qg (nc)
6.2
Qgs (nc)
1.4
Qgd (nc)
0.3
Id(a)
-1.9
Pd(w)
1.38
Configuration
Single P
Package
SOT-23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP2303GN
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
AP2303GN-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
Company:
Part Number:
AP2303GN-HF
Quantity:
4 195
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Data and specifications subject to change without notice
V
V
I
I
I
P
T
T
Rthj-a
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1,2
3
3
SOT-23
D
G
S
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
-55 to 150
-55 to 150
Rating
BV
R
I
D
G
+ 20
1.38
0.01
- 30
-1.9
-1.5
-10
DS(ON)
DSS
Value
90
AP2303GN
D
S
240mΩ
200907153
- 1.9A
-30V
Units
W/℃
℃/W
Unit
W
V
V
A
A
A
1

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AP2303GN Summary of contents

Page 1

... Operating Junction Temperature Range J Thermal Data Symbol Rthj-a Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice P-CHANNEL ENHANCEMENT MODE POWER MOSFET D S SOT-23 G Parameter 3 3 1,2 Parameter 3 AP2303GN RoHS-compliant Product BV -30V DSS R 240mΩ DS(ON 1. Rating Units - -1.9 -1 ...

Page 2

... AP2303GN Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 1 ℃ =25 1.4 1.2 1 0.8 0.6 -50 11 Fig 4. Normalized On-Resistance -50 1.1 1.3 Fig 6. Gate Threshold Voltage v.s. AP2303GN o C -10V -8.0V -6.0V -5.0V V =-4. Drain-to-Source Voltage (V) DS =-1.7A = -10V 0 50 100 Junction Temperature ( 100 Junction Temperature ( ...

Page 4

... AP2303GN -1. -15V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 100 Single Pulse 0.01 0 Drain-to-Source Voltage (V) DS Fig 9. Maximum Safe Operating Area V DS 90% 10 d(on) Fig 11. Switching Time Waveform ...

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