AP1003BST Advanced Power Electronics Corp., AP1003BST Datasheet - Page 3

• Manufacturer Part Number: AP1003BST
• Description: The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible
• Manufacturer: Advanced Power Electronics Corp.

Specifications of AP1003BST

• Vds: 30V
• Vgs: ±20V
• Rds(on) / Max(m?) Vgs@10v: 4.5
• Rds(on) / Max(m?) Vgs@4.5v: 7.5
• Qg (nc): 12
• Qgs (nc): 3
• Qgd (nc): 6
• Id(a): 17.3
• Pd(w): 2.2
• Configuration: Single N
• Package: GreenFET-MX

120
100
5.6
5.2
4.8
4.4
3.6
3.2
80
60
40
20
12
10
0
8
6
4
2
0
6
4
0
0
2
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristic of
0.2
Reverse Diode
V
V
T
1
V
SD
DS
j
=150
4
GS
0.4
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
, Gate-to-Source Voltage (V)
o
C
T
2
A
0.6
=25
6
o
C
T
0.8
I
D
A
3
=25
=11A
T
j
℃
1
=25
8
o
4
C
V
1.2
G
=4.0V
7.0V
6.0V
5.0V
10V
1.4
10
5
1.4
1.2
0.8
0.6
0.4
0.2
1.6
1.2
0.8
0.4
80
60
40
20
1
0
2
-50
-50
0
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Fig 6. Gate Threshold Voltage v.s.
V
I
D
G
=13A
=10V
Junction Temperature
v.s. Junction Temperature
V
1
T
DS
0
T
0
j
,Junction Temperature (
, Drain-to-Source Voltage (V)
j
, Junction Temperature (
T
A
2
=150
50
50
o
C
3
AP1003BST
100
100
o
C)
o
4
C)
V
G
=4.0V
7.0V
6.0V
5.0V
10V
150
150
5
3