MAX2203 Maxim, MAX2203 Datasheet - Page 2

• Manufacturer Part Number: MAX2203
• Description: The MAX2203 RMS power detector is designed to operate from 800MHz to 2
• Manufacturer: Maxim

RMS Power Detector
ABSOLUTE MAXIMUM RATINGS
V
ENA, OUT, FILT to GND ........................................-0.3V to +3.0V
RFIN Input Power ...........................................................+10dBm
Continuous Power Dissipation (T
DC ELECTRICAL CHARACTERISTICS
(V
otherwise noted.) (Note 3)
AC ELECTRICAL CHARACTERISTICS
(V
(Note 3)
Note 1: Package thermal resistances were obtained using the method described in JEDEC specifications. For detailed information
Note 2: Refer to Application Note 1891: Wafer-Level Packaging (WLP) and Its Applications .
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Note 3: Guaranteed by production test at T
Note 4: Guaranteed by design and characterization.
Note 5: Input power -24dBm to +3dBm. Ideal straight line calibrated with input power -20dBm and 0dBm at T
2
RF Input Frequency
Maximum Output Voltage
Minimum Output Voltage
Minimum Input Power Level
Log Slope
Log Conformance Error with
10dB Step
Power-Detector Accuracy Due to
Temperature
Supply Voltage
Supply Current
Shutdown Supply Current
ENA Logic-High Threshold
ENA Logic-Low Threshold
ENA Input Current
CC
CC
CC
6-Bump WLP (derate 2.9mW/°C above +70°C)...........232mW
_______________________________________________________________________________________
to GND ...........................................................-0.3V to +4.5V
CAUTION! ESD SENSITIVE DEVICE
= 2.5V to 4.2V, T
= 2.8V, T
on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
T
A
PARAMETER
PARAMETER
= +25°C, and over frequency limits.
A
= -40°C to +85°C, V
A
= -40°C to +85°C, V
A
= +70°C)
ENA
SYMBOL
SYMBOL
V
I
V
V
CC
= 2.7V, f
CC
IH
IL
A
ENA
= +85°C and 800MHz. Guaranteed by design and characterization at T
= 2.7V, no RF signal applied. Typical values are at V
RFIN at +3dBm
No RF input power
+1dB input power step results in at least
25mV increase in V
[(V
(Notes 4, 5)
RF input at -4dBm to 0dBm, T
+85°C, relative to +25°C
V
V
V
RF
CC
ENA
ENA
OUT
= 800MHz to 2GHz, unless otherwise noted. Typical values are at T
= 2.8V, RF input = -24dBm to +3dBm
= 0V
= 1.1V
at +3dBm) - (V
CONDITIONS
CONDITIONS
Junction-to-Ambient Thermal Resistance (θ
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range .............................-65°C to +160°C
Junction Temperature .....................................................+150°C
Lead Temperature (soldering, 10s)..........Reflow Profile (Note 2)
OUT
OUT
(Note 1) ......................................................................347°C/W
(Note 4)
at -24dBm)]/27
A
= -40°C to
1.05
MIN
800
-1.3
MIN
-24
2.5
1.1
25
0
CC
= 2.8V, T
±0.4
TYP
TYP
300
1.5
2.8
0.5
35
25
5
A
= +25°C.
JA
)
A
MAX
2000
+1.3
MAX
1.75
400
= +25°C, unless
A
4.2
2.7
0.6
45
10
8
= -40°C and
A
= +25°C.)
UNITS
mV/dB
UNITS
MHz
dBm
mV
mA
dB
dB
µA
µA
V
V
V
V