LM339DR Rohm Semiconductor, LM339DR Datasheet - Page 7
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LM339DR
Manufacturer Part Number
LM339DR
Description
IC COMPARATOR QUAD GP 8SOIC
Manufacturer
Rohm Semiconductor
Series
Trophyr
Type
General Purposer
Datasheet
1.LM2903PWR.pdf
(10 pages)
Specifications of LM339DR
Number Of Elements
4
Output Type
CMOS, MOS, Open-Collector, TTL
Voltage - Supply
2 V ~ 36 V, ±1 V ~ 18 V
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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●Derating Curves
●Precautions
© 2010 ROHM Co., Ltd. All rights reserved.
LM393DR/PWR/DGKR,LM2903DR/PWR/DGKR/VQDR/VQPWR
LM339DR/PWR,LM2901DR/PWR/VQDR/VQPWR
www.rohm.com
10) Board inspection
1) Unused circuits
2) Input terminal voltage
3) Power supply (single / dual)
4) Power dissipation Pd
5) Short-circuit between pins and erroneous mounting
6) Terminal short-circuits
7) Operation in a strong electromagnetic field
8) Radiation
9) IC handing
When there are unused circuits it is recommended that they be connected as in Fig. 6,
setting the non-inverting input terminalto a potential within the in-phase input voltage range (VICR).
Applying GND + 36V to the input terminal is possible without causing deterioration of the electrical
normal circuit operation.
Please note that the circuit operates normally only when the input voltage is within the common
mode input voltage range of the electric characteristics.
The op-amp operates when the specified voltage supplied is between Vcc and GND. Therefore, the single supply op-amp can be used as
a dual supply op-amp as well.
Using the unit in excess of the rated power dissipation may cause deterioration in electrical characteristics due to a rise in chip
temperature, including reduced current capability. Therefore, please take into consideration the power dissipation (Pd) under actual
operating conditions and apply a sufficient margin in thermal design. Refer to the thermal derating curves for more information.
Incorrect mounting may damage the IC. In addition, the presence of foreign particles between the outputs, the output and the power
supply, or the output and GND may result in IC destruction.
When the output and Vcc terminals are shorted, excessive output current may flow, resulting in undue heat generation and, subsequently,
destruction.
Operation in a strong electromagnetic field may cause malfunctions.
This IC is not designed to withstand radiation.
Applying mechanical stress to the IC by deflecting or bending the board may cause fluctuations in the electrical characteristics due to
piezoelectric (piezo) effects.
Connecting a capacitor to a pin with low impedance may stress the IC. Therefore, discharging the capacitor after every process is
recommended. In addition, when attaching and detaching the jig during the inspection phase, ensure that the power is turned OFF before
inspection and removal. Furthermore, please take measures against ESD in the assembly process as well as during transportation and
storage.
characteristics or destruction, irrespective of the supply voltage. However, this does not ensure
1000
800
600
400
200
0
LM393DR/PWR/DGKR
25
Ambient temperature : Ta [ ℃ ]
500[mV] TSSOP8 (*4)
470[mV] MSOP8/VSSOP8 (*5)
450[mV] SOIC8 (*6)
θja = (Tj-Ta)/Pd[℃/W]
50
Power Dissipation
MSOP8/VSSOP8
75
70[ ℃ ]
TSSOP8 (*4)
SOIC8 (*6)
Package
100
Fig.5 Derating Curves
125
150
7/9
Pd[W]
450
500
470
LM2903DR/PWR/DGKR/VQDR/VQPWR
1000
800
600
400
200
0
θja [℃/W]
25
3.76
Ambient temperature : Ta [ ℃ ]
3.6
4.0
470[mV] MSOP8/VSSOP8 (*5)
500[mV] TSSOP8 (*4)
450[mV] SOIC8 (*6)
50
75
100
Fig.6 Disable circuit example
125
125[ ℃ ]
150
Technical Note
2010.04 - Rev.A
-
+
GND
V cc