TC1041CEOA Microchip Technology, TC1041CEOA Datasheet - Page 2

• Manufacturer Part Number: TC1041CEOA
• Description: IC DUAL COMPARATOR W/VREF 8SOIC
• Manufacturer: Microchip Technology
• Type: with Voltage Referencer

Specifications of TC1041CEOA

• Output Type: Rail-to-Rail
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Number Of Elements: 2
• Voltage - Supply: 1.8 V ~ 5.5 V
• Mounting Type: Surface Mount
• Number Of Channels: 2 Channels
• Product: Analog Comparators
• Response Time: 4 us
• Offset Voltage (max): 5 mV
• Input Bias Current (max): 100 pA
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Supply Current (max): 15 uA
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TC1041
1.0
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................6.0V
Voltage on Any Pin .......... (V
Junction Temperature....................................... +150°C
Operating Temperature Range............. -40°C to +85°C
Storage Temperature Range .............. -55°C to +150°C
TC1041 ELECTRICAL SPECIFICATIONS
DS21346B-page 2
Electrical Characteristics: Typical values apply at 25°C and V
+85°C and V
V
I
Comparators
V
V
I
V
V
CMRR
PSRR
I
I
V
I
t
t
Voltage Reference
V
I
I
C
E
e
Note
Q
B
SRC
SINK
HYST
PD1
PD2
REF(SOURCE)
REF(SINK)
VREF
DD
IR
OS
OH
OL
HYST
REF
L(REF)
VREF
Symbol
1:
ELECTRICAL
CHARACTERISTICS
V
V
OS
REF
DD
Supply Voltage
Supply Current Operating
IN+ Voltage Range
Input Offset Voltage
Input Bias Current
Output High Voltage
Output Low Voltage
Common Mode Rejection Ratio
Power Supply Rejection Ratio
Output Source Current
Output Sink Current
Voltage Range at HYST Pin
Hysteresis Input Current
Response Time
Response Time
Reference Voltage
Source Current
Sink Current
Load Capacitance
Noise Voltage
Noise Voltage Density
is measured as (V
= 1.8V to 5.5V, unless otherwise specified.
– V
HYST
set to 10mV. This represents the assymetry of the hysteresis thresholds around V
Parameter
SS
UT
+ V
– 0.3V) to (V
LT
– 2V
REF
)/2 where V
DD
V
V
V
REF
+ 0.3V)
DD
SS
1.176
Min
1.8
66
60
50
50
—
—
—
—
—
—
—
—
—
-5
-5
1
2
– 0.2
– 0.08
– 0.3
UT
is the upper hysteresis threshold and V
DD
= 3.0V. Minimum and maximum values apply for T
1.200
Typ
1.0
10
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4
6
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
V
DD
1.224
±100
V
±100
Max
100
5.5
0.3
15
+5
+5
—
—
—
—
—
—
—
—
—
—
—
REF
+ 0.2
µV/√Hz 1kHz
µV
Units
µsec
µsec
mV
mV
mA
mA
µA
pA
dB
dB
nA
µA
µA
pF
LT
V
V
V
V
V
V
RMS
REF
is the lower hysteresis threshold with
©
.
2002 Microchip Technology Inc.
All Outputs Open
V
T
T
IN+ = V
R
R
T
V
T
V
IN+ = V
Output Shorted to V
V
IN+ = V
Output Shorted to V
V
100mV Overdrive, C
10mV Overdrive, C
100Hz to 100kHz
A
A
A
A
DD
CM
DD
DD
DD
L
L
= -40°C to 85°C (Note 1)
= 25°C,
= 25°C, V
= 25°C
= 10kΩ to V
= 10kΩ to V
= 3V, T
= 1.8V to 5V
= 1.8V
= 1.8V
= V
Test Conditions
DD
DD
SS
DD
,
,
to V
to V
A
DD
= 25°C
SS
SS
DD
SS
= 5V
A
= -40° to
L
SS
DD
L
= 100pF
= 100pF