BLF7G27LS-150P NXP Semiconductors, BLF7G27LS-150P Datasheet - Page 9

150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz

BLF7G27LS-150P

Manufacturer Part Number
BLF7G27LS-150P
Description
150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF7G27LS-150P
Quantity:
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NXP Semiconductors
8. Package outline
Fig 15. Package outline SOT539A
BLF7G27L-150P_7G27LS-150P
Product data sheet
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
inches
UNIT
mm
OUTLINE
VERSION
SOT539A
H
0.185
0.165
4.7
4.2
A
U 2
A
11.81
11.56
0.465
0.455
A
L
b
0.007
0.004
0.18
0.10
c
31.55
30.94
1.242
1.218
IEC
D
31.52
30.96
1.241
1.219
D 1
3
1
13.72
0.540
e
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
JEDEC
0.374
0.366
9.50
9.30
E
U 1
H 1
D 1
D
q
e
REFERENCES
Rev. 1 — 12 November 2010
0.375
0.365
9.53
9.27
E 1
0.069
0.059
1.75
1.50
0
F
b
scale
17.12
16.10
0.674
0.634
EIAJ
2
4
H
5
25.53
25.27
1.005
0.995
10 mm
H 1
0.137
0.117
3.48
2.97
w 2
w 3
5
L
M
M
C
0.130
0.120
3.30
3.05
C
p
p
F
M
B
0.089
0.079
2.26
2.01
Q
w 1
M
35.56
1.400
A
q
PROJECTION
EUROPEAN
M
41.28
41.02
1.625
1.615
B
U 1
Power LDMOS transistor
M
10.29
10.03
0.405
0.395
E 1
U 2
c
© NXP B.V. 2010. All rights reserved.
0.010 0.020
0.25
Q
w 1
ISSUE DATE
00-03-03
10-02-02
0.51
w 2
SOT539A
E
0.010
0.25
w 3
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