BLF6G38-100 NXP Semiconductors, BLF6G38-100 Datasheet - Page 6

• Manufacturer Part Number: BLF6G38-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G38-100_6G38LS-100_1
Product data sheet
Fig 6.
Fig 8.
(dB)
(dB)
G
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
P
P
18
16
14
12
10
15
13
11
9
7
10
1
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain and drain efficiency as function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
−1
DS
DS
= 28 V; I
= 28 V; I
Dq
Dq
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(3)
10
10
P
G
η
L(AV)
D
P
P
(W)
All information provided in this document is subject to legal disclaimers.
L
001aaj041
001aaj043
(W)
10
10
Rev. 2 — 24 October 2011
BLF6G38-100; BLF6G38LS-100
2
2
40
30
20
10
0
(%)
η
D
Fig 7.
Fig 9.
ACPR
(dBc)
(W)
P
(1) Low frequency component
(2) High frequency component
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
−35
−45
−55
−65
−75
−85
i
3
2
1
0
10
10
V
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
Adjacent channel power ratio as a function of
load power; typical values
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
−1
−1
ACPR
ACPR
DS
DS
ACPR
= 28 V; I
= 28 V; I
1500k
1980k
885k
Dq
Dq
WiMAX power LDMOS transistor
1
1
= 1050 mA; f = 3500 MHz;
= 1050 mA; single carrier IS-95;
(1)
(2)
(2)
(1)
(1)
(2)
10
10
(1)
(2)
(3)
P
L(AV)
© NXP B.V. 2011. All rights reserved.
P
L
001aaj042
001aaj045
(W)
(W)
10
10
2
2
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