BLF6G27LS-100 NXP Semiconductors, BLF6G27LS-100 Datasheet - Page 7

• Manufacturer Part Number: BLF6G27LS-100
• Description: 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF6G27-100_BLF6G27LS-100
Product data sheet
Fig 5.
(dB)
G
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
p
19
18
17
16
15
14
1
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
Power gain and drain efficiency as a function
of average output power; typical values
DS
= 28 V; I
G
η
7.4 IS-95 performance
D
p
Dq
= 900 mA; IS-95 with pilot, paging, sync
10
(1)
(2)
(3)
P
L(AV)
(W)
All information provided in this document is subject to legal disclaimers.
(1)
(2)
(3)
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BLF6G27-100; BLF6G27LS-100
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Rev. 02 — 8 July 2010
50
40
30
20
10
0
(%)
η
D
Fig 6.
ACPR
(dBc)
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
−30
−40
−50
−60
−70
−80
1
V
and 6 traffic channels (Walsh codes 8 to 13);
PAR = 9.7 dB at 0.01 % probability on the CCDF;
channel bandwidth = 1.2288 MHz.
ACPR at 885 kHz and at 1980 kHz as a function
of average output power; typical values
DS
ACPR
ACPR
= 28 V; I
1980k
855k
Dq
WiMAX power LDMOS transistor
= 900 mA; IS-95 with pilot, paging, sync
10
(2)
(1)
(3)
(1)
(2)
(3)
P
L(AV)
© NXP B.V. 2010. All rights reserved.
(W)
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