PSMN015-60BS NXP Semiconductors, PSMN015-60BS Datasheet - Page 2
![](/photos/41/50/415039/sot404_3d_sml.gif)
PSMN015-60BS
Manufacturer Part Number
PSMN015-60BS
Description
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN015-60BS.pdf
(13 pages)
NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN015-60BS
Product data sheet
Pin
1
2
3
mb
Type number
PSMN015-60BS
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base; connected to drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 March 2012
Conditions
T
T
V
V
pulsed; t
see
T
T
pulsed; t
V
V
j
j
mb
mb
GS
GS
GS
sup
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
≥ 25 °C; T
≥ 25 °C; T
Figure 3
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
≤ 60 V; R
Simplified outline
p
p
≤ 10 µs; T
≤ 10 µs; T
j
j
SOT404 (D2PAK)
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
GS
= 100 °C; see
= 25 °C; see
= 50 Ω; unclamped
Figure 2
= 25 °C; I
1
mb
mb
mb
2
= 25 °C;
= 25 °C
3
GS
D
= 20 kΩ
= 50 A;
Figure 1
Figure 1
PSMN015-60BS
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
mbb076
G
© NXP B.V. 2012. All rights reserved.
20
175
175
260
Version
SOT404
Max
60
60
36
50
201
86
50
201
44
D
S
Unit
V
V
V
A
A
A
W
°C
°C
°C
A
A
mJ
2 of 13