BT139-800 NXP Semiconductors, BT139-800 Datasheet - Page 3

Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance

BT139-800

Manufacturer Part Number
BT139-800
Description
Planar passivated four quadrant triac in a SOT78 plastic package intended for use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT139-800
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
All information provided in this document is subject to legal disclaimers.
Conditions
full sine wave; T
see
full sine wave; T
t
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
p
p
T
T
T
T
Rev. 5 — 23 March 2011
= 20 ms; see
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
= 20 A; I
= 20 A; I
= 20 A; I
Figure
G
G
G
G
1; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
Figure
mb
j(init)
j(init)
Figure
≤ 99 °C;
= 25 °C;
= 25 °C;
4; see
G
G
G
G
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
2; see
Figure 5
Figure 3
BT139-800
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
150
Max
800
16
155
170
120
50
50
50
10
2
5
5
0.5
125
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
3 of 14
2
s

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