BT136S-600 NXP Semiconductors, BT136S-600 Datasheet - Page 7

• Manufacturer Part Number: BT136S-600
• Description: Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BT136S-600
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
T
GT
D
com
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating voltage
gate-controlled turn-on
time
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
see
V
V
waveform; gate open circuit
V
dI
circuit
I
dI
T
TM
D
D
D
D
D
D
D
D
D
D
D
D
DM
D
com
G
= 5 A; T
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 400 V; T
= 6 A; V
Figure 7
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 8
Figure 11
Figure 11
= 402 V; T
/dt = 1.8 A/ms; I
Rev. 03 — 31 March 2011
j
= 25 °C; see
T
T
T
T
G
G
G
G
T
D
j
T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 0.1 A; T2- G+; T
= 0.1 A; T
= 0.1 A; T2+ G+; T
= 25 °C; see
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 0.1 A; T2- G+; T
j
j
= 600 V; I
= 0.1 A; T
= 125 °C
= 95 °C;
j
= 125 °C; exponential
T
= 4 A; gate open
j
G
= 25 °C;
Figure 10
j
= 0.1 A;
= 125 °C;
Figure 9
j
j
j
j
j
j
j
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
Min
-
-
-
-
-
-
-
-
-
-
-
0.25
-
100
-
-
BT136S-600
Typ
5
8
11
30
7
16
5
7
5
1.4
0.7
0.4
0.1
250
50
2
© NXP B.V. 2011. All rights reserved.
Max
35
35
35
70
20
30
20
30
15
1.7
1.5
-
0.5
-
-
-
4Q Triac
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
V/µs
µs
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