BT131-600D NXP Semiconductors, BT131-600D Datasheet - Page 6

• Manufacturer Part Number: BT131-600D
• Description: Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 5.
T
BT131_SER_D_E
Product data sheet
Symbol Parameter
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25
com
D
/dt
/dt rate of change of

C unless otherwise stated.
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
commutating voltage
rate of rise of off-state
voltage
gate-controlled
turn-on time
Characteristics
Conditions
V
see
V
see
V
see
I
I
V
V
dI
V
T
waveform; R
see
I
I
T
T
TM
G
j
D
D
D
D
DM
DM
com
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 1.4 A; see
= 100 mA; see
V
V
= 125 C; exponential
= 100 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
D
D
= 1.5 A; V
Figure 8
Figure 10
Figure 11
Figure 12
= 400 V; T
= 67 % of V
/dt = 0.5 A/ms
= 12 V; T
= 400 V; T
DRM(max)
All information provided in this document is subject to legal disclaimers.
T
GT
GT
GK
= 100 mA;
D
= 100 mA;
= 100 mA;
j
Figure 9
; T
j
Rev. 3 — 3 November 2011
G
= V
= 25 C
= 1 k;
j
= 125 C;
DRM(max)
/dt = 5 A/s
= 125 C
Figure 7
j
= 125 C
DRM(max)
;
;
Min
0.2
20
3
-
-
-
-
-
-
-
-
-
-
-
-
-
BT131 series D and E
BT131-600D
BT131-800D
Typ
1.3
1.2
0.7
0.3
0.1
2
-
-
-
-
-
-
-
-
-
-
Max
1.5
1.5
0.5
10
20
10
10
10
5
5
5
7
-
-
-
-
Min
0.2
50
5
-
-
-
-
-
-
-
-
-
-
-
-
-
BT131-600E
BT131-800E
Typ
1.3
1.2
0.7
0.3
0.1
2
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
Triacs logic level
Max
1.5
1.5
0.5
10
10
10
10
15
25
15
15
10
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/s
V/s
s
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