BT151X-800C NXP Semiconductors, BT151X-800C Datasheet - Page 4

• Manufacturer Part Number: BT151X-800C
• Description: Passivated thyristors in a full pack, plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

April 2004
P tot
Thyristors
(W)
15
10
Fig.2. Maximum permissible non-repetitive peak
I T(RMS)
5
Fig.1. Maximum on-state dissipation, P
0
Fig.3. Maximum permissible rms current I
0
(A)
on-state current I
Semiconductors
1000
100
10
conduction
angle
14
12
10
10us
8
6
4
2
0
120˚
180˚
30˚
60˚
90˚
-50
(α)
average on-state current, I
ITSM / A
30
I
T
Tj initial = 25 C max
versus heatsink temperature T
dI /dt limit
sinusoidal currents, t
form
factor
1.9
T
1.57
(a)
4.0
2.8
2.2
a = form factor = I
4
T
2
I TSM
time
0
4
100us
TSM
, versus pulse width t
4
2.8
T / s
50
T(RMS)
2.2
p
69 °C
1ms
≤ 10ms.
T(AV)
/ I
6
1.9
T(AV)
I T(AV) (A)
, where
α
100
a = 1.57
.
hs
tot
.
T hs (°C)
, versus
T(RMS)
p
, for
8
10ms
T hs(max)
102.5
125
57.5
80
150
(°C)
,
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
on-state current I
Fig.4. Maximum permissible non-repetitive peak
GT
120
100
1.6
1.4
1.2
0.8
0.6
0.4
80
60
40
20
25
20
15
10
0
5
0
0.01
1
(T
-50
1
ITSM / A
IT(RMS) / A
VGT(25 C)
j
VGT(Tj)
Fig.6. Normalised gate trigger voltage
)/ V
T(RMS)
GT
currents, f = 50 Hz; T
sinusoidal currents, f = 50 Hz.
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
Number of half cycles at 50Hz
TSM
0.1
10
surge duration / s
, versus number of cycles, for
Tj / C
50
BT151X series C
I
Product specification
T
Tj initial = 25 C max
hs
100
1
≤ 69˚C.
T
100
I TSM
time
Rev 1.000
1000
150
10
j
.