BTA316-800B0 NXP Semiconductors, BTA316-800B0 Datasheet - Page 3

• Manufacturer Part Number: BTA316-800B0
• Description: Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA316-800B0
Preliminary data sheet
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
Fig 1.
stg
j
DRM
t
GM
G(AV)
T
/dt
I
T(RMS)
(A)
20
16
12
8
4
0
-50
base temperature; maximum values
RMS on-state current as a function of mounting
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I
2
t for fusing
0
50
100
All information provided in this document is subject to legal disclaimers.
T
003aab684
mb
( C)
Rev. 2 — 17 November 2011
150
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
over any 20 ms period
p
T
= 10 ms; sine-wave pulse
= 20 A; I
Figure
Figure
G
2; see
4; see
Fig 2.
= 0.2 A; dI
I
T(RMS)
(A)
mb
j(init)
j(init)
Figure 3
Figure 5
60
50
40
30
20
10
≤ 101 °C; see
0
10
duration; maximum values
RMS on-state current as a function of surge
= 25 °C; t
= 25 °C; t
-2
G
/dt = 0.2 A/µs
p
p
= 20 ms;
= 16.7 ms
10
Figure
-1
BTA316-800B0
1;
1
surge duration (s)
Min
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
003aab685
98
150
Max
800
16
140
150
100
2
5
0.5
125
10
Unit
V
A
A
A
A
A/µs
A
W
W
°C
°C
3 of 14
2
s