BTA206X-800CT NXP Semiconductors, BTA206X-800CT Datasheet - Page 7

• Manufacturer Part Number: BTA206X-800CT
• Description: Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
BTA206X-800CT
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
GT
L
H
D
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
V
V
V
circuit
V
dV
condition); gate open circuit
V
dV
V
dV
T
D
D
D
D
D
D
D
D
D
D
DM
DRM
D
D
D
= 7 A; see
com
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 800 V; T
= 400 V; T
= 400 V; T
= 400 V; T
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 11
= 536 V; T
Rev. 2 — 19 December 2011
); exponential waveform; gate open
/dt = 20 V/µs; (snubberless
/dt = 10 V/µs; gate open circuit
/dt = 1 V/µs; gate open circuit
T
T
T
G
G
G
T
j
T
Figure 10
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 25 °C; see
= 0.1 A; T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
j
j
j
= 0.1 A; T
= 150 °C
= 150 °C; I
= 150 °C; I
= 150 °C; I
j
= 150 °C; (V
j
= 25 °C;
j
= 150 °C
T(RMS)
T(RMS)
T(RMS)
Figure 9
DM
j
j
j
j
= 67% of
= 25 °C;
j
= 6 A;
= 6 A;
= 6 A;
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA206X-800CT
Min
4
4
4
-
-
-
-
-
-
0.25
-
500
10
12
20
Typ
-
-
-
-
-
-
-
1.3
0.8
-
0.4
-
-
-
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
35
35
35
50
60
50
35
1.6
1.5
-
2
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/µs
A/ms
A/ms
A/ms
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