BTA2008-800E NXP Semiconductors, BTA2008-800E Datasheet - Page 2

Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package

BTA2008-800E

Manufacturer Part Number
BTA2008-800E
Description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA2008_SER_D_E_1
Product data sheet
Type number
BTA2008-600D
BTA2008-600E
BTA2008-800D
BTA2008-800E
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 6 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Rev. 01 — 18 January 2008
Conditions
BTA2008-600D; BTA2008-600E
BTA2008-800D; BTA2008-800E
full sine wave; T
Figure 4
full sine wave; T
surge; see
t
I
dI
over any 20 ms period
p
TM
G
t = 20 ms
t = 16.7 ms
= 10 ms
/dt = 0.2 A/ s
= 1.5 A; I
and
Figure 2
G
5
BTA2008 series D and E
= 20 mA;
lead
j
0.8 A Three-quadrant triacs high commutation
= 25 C prior to
and
70 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2008. All rights reserved.
Max
600
800
0.8
9
9.9
0.41
100
1
5
0.1
+150
125
Version
SOT54
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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