OP467 Analog Devices, OP467 Datasheet - Page 6

• Manufacturer Part Number: OP467
• Description: Quad Precision, High Speed Operational Amplifier
• Manufacturer: Analog Devices

Specifications of OP467

• -3db Bandwidth: 28MHz
• Slew Rate: 170V/µs
• Vos: 200µV
• Ib: 150nA
• # Opamps Per Pkg: 4
• Input Noise (nv/rthz): 6nV/rtHz
• Vcc-vee: 9V to 36V
• Isy Per Amplifier: 2.5mA
• Packages: DIP,LCC,SOIC

OP467
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Supply Voltage
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Junction Temperature Range
Lead Temperature (Soldering, 60 sec)
1
2
Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.
For supply voltages less than ±18 V, the absolute maximum input voltage is
equal to the supply voltage.
14-Lead CERDIP and 20-Terminal LCC
14-Lead PDIP and 16-Lead SOIC
OP467A
OP467G
14-Lead CERDIP and 20-Terminal LCC
14-Lead PDIP and 16-Lead SOIC
1
2
2
±18 V
Limited
Rating
±18 V
±26 V
−65°C to +175°C
−65°C to +150°C
−55°C to +125°C
−40°C to +85°C
−65°C to +175°C
−65°C to +150°C
300°C
Rev. | Page 6 o f 20
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θ
soldered in a circuit board for surface-mount packages.
Table 5.
Package Type
14-Lead CERDIP (Y)
14-Lead PDIP (P)
16-Lead SOIC (S)
20-Terminal LCC (RC)
1
in socket for CERDIP, PDIP, and LCC packages, and θ
soldered in circuit board for the SOIC package.
DICE CHARACTERISTICS
–IN A
+IN A
+IN B
–IN B
ESD CAUTION
θ
JA
JA
V+
is specified for the worst-case conditions, that is, a device
is specified for the worst-case conditions, that is, θ
2
3
4
5
6
Figure 5. 0.111 Inch × 0.100 Inch DIE Size, 11,100 sq. mils,
Substrate Connected to V+, 165 Transistors
1
7
θ
94
76
88
78
14
8
JA
1
θ
10
33
23
33
JA
JC
is specified for device
JA
is specified for device
Unit
°C/W
°C/W
°C/W
°C/W
13
12
11
10 +IN C
9
–IN D
+IN D
V–
–IN C