AD8009 Analog Devices, AD8009 Datasheet - Page 4

• Manufacturer Part Number: AD8009
• Manufacturer: Analog Devices

Specifications of AD8009

• -3db Bandwidth: 1GHz
• Slew Rate: 5.5kV/µs
• Vos: 2mV
• Ib: 50µA
• # Opamps Per Pkg: 1
• Input Noise (nv/rthz): 1.9nV/rtHz
• Vcc-vee: 5V to 12V
• Isy Per Amplifier: 16mA
• Packages: SOIC,SOT

ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ± V
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 3.5 V
Output Short-Circuit Duration
Storage Temperature Range R Package . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
2
AD8009
Model
AD8009AR
AD8009AR-REEL
AD8009AR-REEL7
AD8009ARZ*
AD8009ARZ-REEL*
AD8009ARZ-REEL7*
AD8009JRT-R2
AD8009JRT-REEL
AD8009JRT-REEL7
AD8009JRTZ-REEL*
AD8009JRTZ-REEL7*
AD8009ACHIPS
*Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Specification is for device in free air:
8-Lead SOIC Package: θ
5-Lead SOT-23 Package: θ
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
JA
= 155°C/W.
JA
= 240°C/W.
2
Temperature
Range
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
0°C to 70°C
1
ORDERING GUIDE
Package
Description
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
8-Lead SOIC
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
5-Lead SOT-23
Die
S
–4–
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction tempera-
ture of 175°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tempera-
ture (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
2.0
1.5
1.0
0.5
–50
0
–40 –30 –20 –10
8-LEAD SOIC PACKAGE
5-LEAD SOT-23 PACKAGE
AMBIENT TEMPERATURE ( C)
Package
Option
R-8
R-8
R-8
R-8
R-8
R-8
RT-5
RT-5
RT-5
RT-5
RT-5
0
10
20
30
40
50
T
J
60
= 150 C
70
Branding
HKJ
HKJ
HKJ
HKJ
HKJ
80
90
REV. F