ADA4891-1 Analog Devices, ADA4891-1 Datasheet - Page 6

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ADA4891-1

Manufacturer Part Number
ADA4891-1
Description
Low Cost CMOS, High Speed, Rail-to-Rail Amplifier (Single)
Manufacturer
Analog Devices
Datasheet

Specifications of ADA4891-1

-3db Bandwidth
240MHz
Slew Rate
170V/µs
Vos
2.5mV
Ib
2pA
# Opamps Per Pkg
1
Input Noise (nv/rthz)
n/a
Vcc-vee
2.7V to 5.5V
Isy Per Amplifier
4.4mA
Packages
SOIC,SOT

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ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Supply Voltage
Input Voltage (Common Mode)
Differential Input Voltage
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 10 sec)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 is limited
by the associated rise in junction temperature. The maximum
safe junction temperature for plastic encapsulated devices is
determined by the glass transition temperature of the plastic,
approximately 150°C. Temporarily exceeding this limit can
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of 175°C for an extended period can result in
device failure.
The still-air thermal properties of the package (θ
temperature (T
(P
The junction temperature can be calculated as
The power dissipated in the package (P
quiescent power dissipation and the power dissipated in the
package due to the load drive for all outputs. It can be calculated by
where:
V
I
V
V
R
S
L
T
S
OUT
D
is the quiescent current.
is the output load of the amplifier.
is the positive supply rail.
is the total supply rail.
) can be used to determine the junction temperature of the die.
T
P
is the output of the amplifier.
J
D
= T
= (V
A
+ (P
T
× I
A
), and the total power dissipated in the package
D
S
) + (V
× θ
JA
)
S
− V
OUT
) × (V
OUT
D
) is the sum of the
/R
L
)
−40°C to +125°C
Rating
6 V
−V
±V
−65°C to +125°C
300°C
S
S
− 0.5 V to +V
JA
), the ambient
S
Rev. C | Page 6 of 24
(1)
(2)
To ensure proper operation, it is necessary to observe the maxi-
mum power derating curves shown in Figure 6. These curves
are derived by setting T
the maximum safe power dissipation in the package vs. the
ambient temperature on a JEDEC standard 4-layer board.
Table 4 lists the thermal resistance (θ
ADA4891-2/ADA4891-3/ADA4891-4 package.
Table 4.
Package Type
5-Lead SOT-23
8-Lead SOIC_N
8-Lead MSOP
14-Lead SOIC_N
14-Lead TSSOP
ESD CAUTION
Figure 6. Maximum Power Dissipation vs. Ambient Temperature
2.0
1.5
1.0
0.5
0
–55
8-LEAD MSOP
–35
5-LEAD SOT-23
–15
AMBIENT TEMPERATURE (°C)
J
= 150°C in Equation 1. Figure 6 shows
5
14-LEAD SOIC_N
14-LEAD TSSOP
25
8-LEAD SOIC_N
45
JA
θ
146
115
133
162
108
) for each ADA4891-1/
JA
65
85
T
105
J
Unit
°C/W
°C/W
°C/W
°C/W
°C/W
= 150°C
125

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