CLC5622IM National Semiconductor, CLC5622IM Datasheet - Page 3

• Manufacturer Part Number: CLC5622IM
• Description: IC AMP VIDEO DUAL 8-SOIC
• Manufacturer: National Semiconductor

Specifications of CLC5622IM

• Applications: Current Feedback
• Number Of Circuits: 2
• -3db Bandwidth: 160MHz
• Slew Rate: 370 V/µs
• Current - Supply: 3.2mA
• Current - Output / Channel: 130mA
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *CLC5622IM

Ambient Temperature
Frequency Domain Response
Time Domain Response
Distortion And Noise Response
Static, DC Performance
Symbol
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
+5V Electrical Characteristics
(A
Supply Voltage (V
Output Current (See note 4)
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
V
= +2, R
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Rise and Fall Time
Settling Time to 0.05%
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
Crosstalk (Input Referred)
Input Offset Voltage (Note 3)
Input Bias Current (Non-Inverting)
(Note 3)
Input Bias Current (Inverting) (Note
3)
Power Supply Rejection Ratio
Voltage (e
Non-Inverting Current (i
Inverting Current (i
Average Drift
Average Drift
Average Drift
f
= 750Ω, R
CC
-V
Parameter
ni
)
L
EE
=100Ω, V
)
bn
)
S
bn
= +5V (Note 5), V
)
−65˚C to +150˚C
CLC5622IN/IM
V
V
V
NTSC, R
NTSC, R
2V Step
1V Step
2V Step
2V Step
2V
2V
2V
2V
2V
2V
10MHz, 1V
DC
<
<
<
>
>
>
(Note 1)
V
O
O
O
200MHz, V
30MHz, V
30MHz, V
1MHz
1MHz
1MHz
EE
PP
PP
PP
PP
PP
PP
= 0.5V
= 2.0V
= 0.5V
+150˚C
,1MHz
,1MHz; R
,5MHz
,1MHz
,1MHz; R
, 5MHz
140mA
to V
+14V
Conditions
CM
L
L
CC
PP
PP
PP
= 150Ω to −1V
= 150Ω to −1V
PP
= V
O
O
O
= 0.5V
=0.5V
L
L
= 0.5V
EE
= 1kΩ
= 1kΩ
3
+ (V
PP
PP
Operating Ratings
Package
MDIP
SOIC
Lead Temperature (soldering 10 sec)
ESD (Human Body Model)
Thermal Resistance
PP
S
/2), RL tied to V
+25˚C
0.15
0.03
0.07
Typ
130
280
−79
−80
−66
−85
−83
−65
−72
0.1
4.5
3.4
6.3
8.7
95
30
17
11
40
25
48
0
1
8
6
6
CM
+25˚C
, unless specified
11.3
100
195
−76
−78
−60
−82
−81
−62
0.5
0.4
0.3
6.0
4.4
8.2
80
25
25
15
18
14
45
–
–
–
4
–
–
–
Min/Max Ratings
65˚C/W
50˚C/W
(θ
JC
(Note 2)
)
70˚C
12.4
0 to
165
−73
−75
−58
−79
−78
−60
0.9
0.6
0.4
6.4
4.9
9.0
90
77
20
40
18
22
16
43
–
–
–
6
–
–
–
−40 to
85˚C
12.4
150
−73
−75
−58
−79
−78
−60
1.3
0.6
0.4
6.8
4.9
9.0
85
75
20
60
18
24
17
43
–
–
–
6
–
–
–
130˚C/W
145˚C/W
www.national.com
(θ
JA
+300˚C
1000V
)
nV/
pA/
pA/
Units
µV/˚C
nA/˚C
nA/˚C
MHz
MHz
MHz
V/µs
deg
deg
dBc
dBc
dBc
dBc
dBc
dBc
mV
dB
dB
dB
µA
µA
dB
ns
ns
%
%