CLC5602IMX National Semiconductor, CLC5602IMX Datasheet - Page 3

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CLC5602IMX

Manufacturer Part Number
CLC5602IMX
Description
IC AMP VIDEO DUAL HI OUT 8-SOIC
Manufacturer
National Semiconductor
Datasheet

Specifications of CLC5602IMX

Applications
Current Feedback
Number Of Circuits
2
-3db Bandwidth
135MHz
Slew Rate
300 V/µs
Current - Supply
1.6mA
Current - Output / Channel
130mA
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*CLC5602IMX

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Quantity
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Quantity:
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Ambient Temperature
Frequency Domain Response
Time Domain Response
Distortion And Noise Response
Static, DC Performance
Symbol
(A
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
Output Current (Note 4)
Common-Mode Input Voltage
Maximum Junction Temperature
Storage Temperature Range
+5V Electrical Characteristics
V
= +2, R
-3dB Bandwidth
−0.1dB Bandwidth
Gain Peaking
Gain Rolloff
Linear Phase Deviation
Differential Gain
Differential Phase
Rise and Fall Time
Settling Time to 0.05%
Overshoot
Slew Rate
2nd Harmonic Distortion
3rd Harmonic Distortion
Equivalent Input Noise
Crosstalk (Input Referred)
Input Offset Voltage (Note 3)
Input Bias Current
(Non-Inverting) (Note 3)
Input Bias Current (Inverting)
(Note 3)
f
Voltage (e
Non-Inverting Current (i
Inverting Current (i
Average Drift
Average Drift
Average Drift
= 750 , R
CC
-V
Parameter
ni
EE
L
)
)
= 100 , V
bi
)
S
bn
= +5V(Note 5), V
)
−65˚C to +150˚C
CLC5602IN/IM
V
V
V
NTSC, R
NTSC, R
2V Step
1V Step
2V Step
2V Step
2V
2V
2V
2V
2V
2V
10MHz, 1V
<
<
<
>
>
>
(Note 1)
O
O
O
200MHz, V
30MHz, V
30MHz, V
1MHz
1MHz
1MHz
PP
PP
PP
PP
PP
PP
V
= 0.5V
= 2.0V
= 0.5V
EE
,1MHz
, 1MHz; R
, 5MHz
,1MHz
,1MHz; R
, 5MHz
+150˚C
140mA
Conditions
to V
CM
L
L
+14V
PP
PP
PP
= 150
= 150
PP
O
O
CC
= V
O
= 0.5V
= 0.5V
L
= 0.5V
L
=1K
EE
= 1K
3
+ (V
to −1V
to −1V
PP
PP
Lead Temperature (soldering 10 sec)
ESD (human body model)
Operating Ratings
Package
MDIP
SOIC
PP
Thermal Resistance
S
/2), R
L
+25˚C
tied to V
0.04
0.09
Typ
100
220
−77
−80
−63
−85
−82
−62
−72
0.1
0.3
6.1
3.4
6.3
8.7
65
22
25
10
25
10
0
1
7
5
3
CM
+25˚C
; unless specified
Min/Max Ratings (Note 2)
11.3
−74
−77
−59
−81
−79
−57
190
0.5
0.3
0.5
8.5
4.4
8.2
85
60
20
35
20
12
10
4
65˚C/W
50˚C/W
(
JC
70˚C
12.4
0 to
)
165
−71
−75
−57
−78
−76
−54
0.9
0.4
0.6
9.2
4.9
9.0
75
55
17
50
22
15
15
60
12
20
5
−40 to
85˚C
10.0
12.4
150
−71
−70
−57
−78
−76
−54
1.0
0.5
0.6
4.9
9.0
70
50
15
80
22
15
16
60
13
20
6
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130˚C/W
145˚C/W
(
JA
+300˚C
nV/
pA/
pA/
1000V
Units
µV/˚C
nA/˚C
nA/˚C
MHz
MHz
MHz
)
V/µs
deg
deg
dBc
dBc
dBc
dBc
dBc
dBc
mV
dB
µA
µA
dB
dB
ns
ns
%
%

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