MBM29F002B-70 Fujitsu, MBM29F002B-70 Datasheet

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MBM29F002B-70

Manufacturer Part Number
MBM29F002B-70
Description
N/A
Manufacturer
Fujitsu
Datasheet
FUJITSU SEMICONDUCTOR
FLASH MEMORY
CMOS
2M (256K
MBM29F002T/002B/002ST/002SB
Embedded Erase
FEATURES
• Single 5.0 V read, write, and erase
• Compatible with JEDEC-standard commands
• Package option
• Minimum 100,000 write/erase cycles
• High performance
• Sector erase architecture
• Boot Code Sector Architecture
• Embedded Erase
• Embedded Program
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Low Vcc write inhibit
• Hardware RESET pin
• Sector protection
• Temporary sector unprotection
• Erase Suspend/Resume
DATA SHEET
Minimizes system level power requirements
Uses same software commands as E
32-pin TSOP (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) ··· MBM29F002T/002B
32-pin PLCC (Package suffix: PD) ··· MBM29F002T/002B
40-pin TSOP (Package suffix: PTN-Normal Bend Type, PTR-Reversed Bend Type) ··· MBM29F002ST/002SB
70 ns maximum access time
One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes.
Any combination of sectors can be concurrently erased. Also supports full chip erase.
T=Top sector
B=Bottom sector
Automatically pre-programs and erases the chip or any sector
Automatically write and verifies data at specified address
Resets internal state machine to the read mode
Hardware method disables any combination of sectors from write or erase operations
Hardware method temporarily enables any combination of sectors from write or erase operations
Suspends the erase operation to allow a read in another sector within the same device
TM
and Embedded Program
TM
Algorithms
TM
Algorithms
3.2 V
TM
are trademarks of Advanced Micro Devices, Inc.
2
PROMs
8) BIT
-70/-90/-12
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DS05-20818-2E

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MBM29F002B-70 Summary of contents

Page 1

... FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 2M (256K MBM29F002T/002B/002ST/002SB FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E • Package option 32-pin TSOP (Package suffix: PFTN-Normal Bend Type, PFTR-Reversed Bend Type) ··· MBM29F002T/002B 32-pin PLCC (Package suffi ...

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MBM29F002T/002B/002ST/002SB PACKAGE Marking side (FPT-32P-M24) Marking side (LCC-32P-M02) 32-pin PLCC Marking side (FPT-40P-M06) 2 -70/-90/-12 Marking side (FPT-32P-M25) 32-pin TSOP Marking side (FPT-40P-M07) 40-pin TSOP To Top / Lineup / Index ...

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... Once the end of a program or erase cycle has been completed, the device 6 internally resets to the read mode. Fujitsu’s Flash technology combines years of EPROM and E of quality, reliability and cost effectiveness. The MBM29F002T/002B/002ST/002SB memory electrically erases the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The byte is programmed one byte at a time using the EPROM programming mechanism of hot electron injection ...

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... MBM29F002T/002ST Sector Architecture 4 -70/-90/-12 3FFFFH 3BFFFH 39FFFH 37FFFH 2FFFFH 1FFFFH 0FFFFH 00000H MBM29F002B/002SB Sector Architecture To Top / Lineup / Index 3FFFFH 64K byte 2FFFFH 64K byte 1FFFFH 64K byte 0FFFFH 32K byte 07FFFH 8K byte 05FFFH 8K byte 03FFFH ...

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MBM29F002T/002B/002ST/002SB PRODUCT SELECTOR GUIDE Part No. Ordering Part No. Max. Address Access Time (ns) Max. CE Access Time (ns) Max. OE Access Time (ns) BLOCK DIAGRAM State Control RESET Command Register CE OE Low V ...

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... TSOP Marking Side MBM29F002T/MBM29F002B Standard Pinout FPT-32P-M24 Marking Side MBM29F002T/MBM29F002B Reverse Pinout FPT-32P-M25 PLCC (Top View MBM29F002T/MBM29F002B LCC-32P-M02 To Top / Lineup / Index -70/-90/- ...

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MBM29F002T/002B/002ST/002SB CONNECTION DIAGRAMS RESET 10 N.C. 11 N. ...

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MBM29F002T/002B/002ST/002SB LOGIC SYMBOL RESET 8 Table 1 MBM29F002T/002B/002ST/002SB Pin Configuration Pin Address Inputs Data Inputs/Outputs ...

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... MBM29F002T/002B/002ST/002SB ORDERING INFORMATION Standard Products Fujitsu standard products are available in several packages. The order number is formed by a combination of: MBM29F002 ST –70 DEVICE NUMBER/DESCRIPTION MBM29F002 2 Mega-bit (256K 5.0 V-only Read, Write, and Erase PFTN PACKAGE TYPE T, B: PFTN = 32-Pin Plastic Thin Small Outline Package ...

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MBM29F002T/002B/002ST/002SB Table 2 Operation Auto-Select Manufacturer Code (1) Auto-Select Device Code (1) Read (3) Standby Output Disable Write Enable Sector Protection (2) Verify Sector Protection (2) Temporary Sector Unprotection Reset (Hardware)/Standby Legend ...

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... The command sequence is illustrated in Table 6 (refer to Autoselect Command section represents the manufacturer’s code (Fujitsu = 04H) and B0H, MBM29F002B = 34H, MBM29F002ST = DCH, and MBM29F002SB = 5DH). All identifires for manufacturer and device will exhibit odd parity with DQ device codes when executing the autoselect time). ACC OE ), output from the device is disabled ...

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... MBM29F002SB Sector Protection * : Outputs 01H at protected sector addresses and outputs 00H at unprotected sector addresses. Type Manufacturer’s Code MBM29F002T MBM29F002B Device Code MBM29F002ST MBM29F002SB Sector Protection Write Device erasure and programming are accomplished via the command register. The contents of the register serve as inputs to the internal state machine ...

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MBM29F002T/002B/002ST/002SB To activate this mode, the programming equipment must force 11.5 V and protected. Tables 4 and 5 define the sector address for each of ...

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... SA6 1 14 Sector Address Tables (MBM29F002T/002ST Sector Address Tables (MBM29F002B/002SB Top / Lineup / Index -70/-90/-12 A Address Range ...

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MBM29F002T/002B/002ST/002SB Table 6 MBM29F002T/002B/002ST/002SB Command Definitions Bus First Bus Command Write Write Cycle Sequence Cycles Req’d Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data Read/Reset* 1 XXXXH F0H Read/Reset* 3 5555H AAH 2AAAH 55H 5555H F0H ...

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... Following the command write, a read cycle from address X000H retrieves the manufacture code of 04H. A read cycle from address X001H returns the device code (MBM29F002T = B0H, MBM29F002B = 34H, MBM29F002ST = DCH, MBM29F002SB = 5DH) (see Tables 3.1 and 3.2). All manufacturer and device codes will exhibit odd parity with the MSB (DQ ) defi ...

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MBM29F002T/002B/002ST/002SB The automatic erase begins on the rising edge of the last WE pulse in the command sequence and terminates when the data “1” (see Write Operation Status section) at which time the device returns to read ...

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... DQ and DQ are reserve pins for future use for Fujitsu internal use only Data Polling The MBM29F002T/002B/002ST/002SB devices feature Data Polling as a method to indicate to the host that the Embedded Algorithms are in progress or completed. During the Embedded Program ...

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MBM29F002T/002B/002ST/002SB The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded Erase Algorithm, or sector erase time-out (see Table 7). See Figure 8 for the Data Polling timing specifications and diagrams Toggle Bit I The ...

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MBM29F002T/002B/002ST/002SB software should check the status of DQ were high on the second status check, the command may not have been accepted. Refer to Table 7: Hardware Sequence Flags Toggle Bit II This toggle bit II, along with ...

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MBM29F002T/002B/002ST/002SB Low V Write Inhibit CC To avoid initiation of a write cycle during V than 3.2 V (typically 3.7 V are disabled. Under this condition the device will reset to the read mode. Subsequent writes will ...

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... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representative beforehand. 22 -70/-90/-12 , OE, RESET (Note 1).......................–2 +7 OE, and RESET pins are – ...

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MBM29F002T/002B/002ST/002SB MAXIMUM OVERSHOOT +0.8 V –0.5 V –2.0 V Figure +2.0 V Figure 2 +14.0 V +13 +0 This waveform is applied for A Figure ...

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MBM29F002T/002B/002ST/002SB DC CHARACTERISTICS • TTL/NMOS Compatible Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage Current LIT Active Current (Note 1) CC1 ...

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MBM29F002T/002B/002ST/002SB • CMOS Compatible Parameter Parameter Description Symbol I Input Leakage Current LI I Output Leakage Current OE, RESET Inputs Leakage Current LIT Active Current (Note 1) CC1 Active Current ...

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MBM29F002T/002B/002ST/002SB AC CHARACTERISTICS • Read Only Operations Characteristics Parameter Symbols JEDEC Standard t t Read Cycle Time AVAV Address to Output Delay AVQV ACC t t Chip Enable to Output Delay ELQV Output Enable ...

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MBM29F002T/002B/002ST/002SB • Write/Erase/Program Operations Alternate WE Controlled Writes Parameter Symbols JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVWL Address Hold Time WLAX Data Setup Time DVWH DS ...

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MBM29F002T/002B/002ST/002SB • Write/Erase/Program Operations Alternate CE Controlled Writes Parameter Symbols JEDEC Standard t t Write Cycle Time AVAV Address Setup Time AVEL Address Hold Time ELAX Data Setup Time DVEH DS ...

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MBM29F002T/002B/002ST/002SB SWITCHING WAVEFORMS • Key to Switching Waveforms WAVEFORM Addresses OEH WE High-Z Outputs Figure 4 INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from ...

Page 30

MBM29F002T/002B/002ST/002SB 3rd Bus Cycle Addresses 5555H Data t DS 5.0 V Notes address of the memory location to be programmed data to be programmed at byte address. ...

Page 31

MBM29F002T/002B/002ST/002SB 3rd Bus Cycle Addresses 5555H A0H Data t DS 5.0 V Notes address of the memory location to be programmed data to be ...

Page 32

MBM29F002T/002B/002ST/002SB Addresses CE t GHWL Data VCS Note the sector address for Sector Erase. Addresses = 5555H for Chip Erase. Figure 5555H 2AAAH 5555H t ...

Page 33

MBM29F002T/002B/002ST/002SB OEH *DQ = Valid Data (The device has completed the Embedded operation). 7 Figure 8 AC Waveforms for Data Polling during Embedded Algorithm Operations ...

Page 34

MBM29F002T/002B/002ST/002SB RESET READY Figure 10 RESET Timing Diagram To Top / Lineup / Index -70/-90/-12 ...

Page 35

MBM29F002T/002B/002ST/002SB VLHT VLHT CSP CE Data SA = Sector Address for ...

Page 36

MBM29F002T/002B/002ST/002SB RESET CE WE Enter Erase Embedded Suspend Erasing WE Erase Toggle DQ and with OE Note read from the erase-suspended sector Program or ...

Page 37

MBM29F002T/002B/002ST/002SB EMBEDDED ALGORITHMS Increment Address Figure 14 Start Write Program Command Sequence (See Below) Data Polling Device No Last Address ? Yes Programming Completed Program Command Sequence* (Address/Command): 5555H/AAH 2AAAH/55H 5555H/A0H Program Address/Program Data Embedded Programming Algorithm To Top / ...

Page 38

MBM29F002T/002B/002ST/002SB EMBEDDED ALGORITHMS Chip Erase Command Sequence* (Address/Command): 38 Start Write Erase Command Sequece (See Below) Data Polling or Toggle Bit Successfully Completed Erasure Completed Individual Sector/Multiple Sector* Erase Command Sequence (Address/Command): 5555H/AAH 5555H/AAH 2AAAH/55H 2AAAH/55H 5555H/80H 5555H/80H 5555H/AAH 5555H/AAH ...

Page 39

MBM29F002T/002B/002ST/002SB No Note rechecked even Figure 16 Start VA = Address for programming Read Byte = Any of the sector addresses ( within the sector being erased Addr ...

Page 40

MBM29F002T/002B/002ST/002SB Note rechecked even changing to “1” -70/-90/-12 Start Read Byte ( Addr. = “H” or “L” Toggle 6 ? Yes ...

Page 41

MBM29F002T/002B/002ST/002SB Increment PLSCNT No No PLSCNT = 25? Yes Remove V from Write Reset Command Device Failed Figure 18 Sector Protection Algorithm To Top / Lineup / Index Start Set Up Sector Addr ...

Page 42

MBM29F002T/002B/002ST/002SB Notes: 1. All protected sectors unprotected. 2. All previously protected sectors are protected once again. Figure 19 Temporary Sector Unprotection Algorithm 42 -70/-90/-12 Start RESET = V ID (Note 1) Perform Erase or Program Operations RESET = V IH ...

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MBM29F002T/002B/002ST/002SB TYPICAL CHARACTERISTICS CURVES READ POWER SUPPLY CURRENT (I ) vs. SUPPLY VOLTAGE CC1 6.0 MHz 1.2 1.0 0.8 0.6 0.4 0.2 0.0 4.5 5.0 V SUPPLY VOLTAGE (V) CC “H” ...

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MBM29F002T/002B/002ST/002SB (Continued) t vs. AMBIENT TEMPERATURE ACC 1 5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 –30 – AMBIENT TEMPERATURE ( vs. AMBIENT TEMPERATURE OE DF 1.4 V ...

Page 45

MBM29F002T/002B/002ST/002SB ERASE AND PROGRAMMING PERFORMANCE Parameter Min. Sector Erase Time — Byte Programming Time — Chip Programming Time — Erase/Program Cycle 100,000 32-PIN TSOP PIN CAPACITANCE (MBM29F002T/002B) Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C ...

Page 46

MBM29F002T/002B/002ST/002SB 32-PIN PLCC PIN CAPACITANCE Parameter Parameter Description Symbol C Input Capacitance IN C Output Capacitance OUT C Control Pin Capacitance IN2 Note: Test conditions 1.0 MHz A 46 -70/-90/-12 Test Setup Typ. V ...

Page 47

... No.: FPT–32P–M24) LEAD No. 1 INDEX 16 0.15±0.05 (.006±.002) 20.00±0.20 (.787±.008) 18.40±0.20 (.724±.008) 0.10(.004) 19.00±0.20 (.748±.008) 1994 FUJITSU LIMITED F32035S-2C-1 C Details of "A" part 32 "A" 17 0.15(.006) 0.25(.010) 8.00±0.20 (.315±.008) 0.50(.0197) TYP 7.50(.295) REF. ...

Page 48

... MBM29F002T/002B/002ST/002SB 32–LEAD PLASTIC FLAT PACKAGE (CASE No.: FPT–32P–M25) LEAD No. 1 INDEX 16 0.15±0.05 (.006±.002) 1997 FUJITSU LIMITED F32036S-2C Details of "A" part 32 "A" 17 19.00±0.20 0.50±0.10 (.748±.008) (.020±.004) 0.50(.0197) 0.10(.004) TYP 18.40±0.20 (.724±.008) 20.00± ...

Page 49

... INDEX 13.97±0.08 (.550±.003 0.66(.026) TYP 0.20 .008 0.43(.017) TYP 10.41±0.51 (.410±.020) 1994 FUJITSU LIMITED C32021S-2C-4 C 3.40±0.16 (.134±.006) 2.25±0.38 (.089±.015) 0.64(.025) MIN 14.94±0.13 12.95±0.51 (.588±.005) (.510±.020) R0.95(.037) TYP +0.05 –0.02 +.002 – ...

Page 50

... MBM29F002T/002B/002ST/002SB 40–LEAD PLASTIC FLAT PACKAGE (CASE No.: FPT–40P–M06) LEAD No. 1 INDEX 20 0.15±0.05 (.006±.002) 1994 FUJITSU LIMITED F40007S-1C Details of "A" part 40 "A" 21 20.00±0.20 (.787±.008) 18.40±0.20 (.724±.008) 0.50(.0197) TYP 0.10(.004) 19.00±0.20 0.50±0.10 (.748±.008) (.020± ...

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... LEAD No. 1 INDEX 20 19.00±0.20 (.748±.008) 0.15±0.05 0.10(.004) (.006±.002) 18.40±0.20 (.724±.008) 20.00±0.20 (.787±.008) 1994 FUJITSU LIMITED F40008S-1C Details of "A" part "A" 0.15(.006) 0.25(.010) 21 0.20±0.10 0.10(.004) (.008±.004) 0.50±0.10 9.50(.374) (.020±.004) REF ...

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... To Top / Lineup / Index -70/-90/-12 All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. Also, ...

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