K4F151611D-TC50 Samsung, K4F151611D-TC50 Datasheet
K4F151611D-TC50
Specifications of K4F151611D-TC50
Related parts for K4F151611D-TC50
K4F151611D-TC50 Summary of contents
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... Fast Page Mode DRAM family is fabricated using Samsung s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machin es. FEATURES • Part Identification - K4F171611D-J(T) (5V, 4K Ref.) - K4F151611D-J(T) (5V, 1K Ref.) - K4F171612D-J(T) (3.3V, 4K Ref.) - K4F151612D-J(T) (3.3V, 1K Ref.) • Active Power Dissipation 3.3V ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D • K4F17(5)1611(2)D DQ0 2 DQ1 3 DQ2 4 DQ3 DQ4 7 DQ5 8 DQ6 9 DQ7 10 N RAS 14 *A11(N.C) 15 *A10(N. *A10 and A11 are N.C for K4F151611(2)D(5V/3.3V, 1K Ref. product 400mil 42 SOJ T : 400mil 50(44) TSOP II ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative Voltage on V supply relative Storage Temperature Power Dissipation Short Circuit Output Current * Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D DC AND OPERATING CHARACTERISTICS Symbol Power I Don t care Normal I Don t care Don t care Don t care Normal I Don t care Don t care Don t care Don t care CCS Operating Current (RAS and UCAS, LCAS cycling @t ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D CAPACITANCE (T = Parameter Input capacitance [A0 ~ A11] Input capacitance [RAS, UCAS, LCAS, W, OE] Output capacitance [DQ0 - DQ15] AC CHARACTERISTICS ( Test condition (5V device =5.0V 10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0. Test condition (3.3V device =3.3V 0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V CC Parameter Random read or write cycle time ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D AC CHARACTERISTICS (Continued) Parameter Data set-up time Data hold time Refresh period (1K, Normal) Refresh period (4K, Normal) Refresh period (L-ver) Write command set-up time CAS to W delay time RAS to W delay time Column address to W delay time CAS precharge to W delay time ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D NOTES An initial pause of 200us is required after power-up followed by any 8 RAS -only refresh or CAS-before-RAS refresh cycles 1. before proper device operation is achieved. 2. Input voltage levels are Vih/Vil. V Transition times are measured between V 3. Measured with a load equivalent to 2 TTL(5V)/1TTL(3.3V) loads and 100pF. ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D 13 referenced to the later CAS falling edge at word read-modify-write cycle 14. is specified from W falling edge to the earlier CAS rising edge CWL 15 referenced to the earlier CAS falling edge before RAS transition low. CSR 16 referenced to the later CAS rising edge after RAS transition low. ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD READ CYCLE RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD t CSH RCD ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 CRP t CSH CRP t RCD ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE READ CYCLE NOTE : D = OPEN RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP t RCD CRP ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS CRP t CSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t CSH CRP ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D WORD READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D LOWER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D UPPER-BYTE READ - MODIFY - WRITE CYCLE RAS CRP UCAS CRP LCAS ASR ROW A ADDR DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 RSH ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD READ CYCLE RAS CRP UCAS LCAS ASR RAH ADDR DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE READ CYCLE RAS CRP UCAS LCAS ASR RAH ROW DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE READ CYCLE RAS UCAS CRP LCAS ASR RAH ROW DQ0 ~ DQ7 DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS LCAS ASR RAH ROW A ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE ) NOTE : D = OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ADDR DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE RAS UCAS LCAS RAD t ASR t ASC ROW DQ0 ~ DQ7 I/OL DQ8 ~ DQ15 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE RAS UCAS LCAS RAD t ASR t ASC ROW DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE RAS UCAS LCAS RAD t ASR t ASC ROW DQ0 ~ DQ7 ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D RAS - ONLY REFRESH CYCLE NOTE : Don t care OPEN OUT RAS CRP UCAS CRP LCAS ASR RAH ROW A ADDR CAS - BEFORE - RAS REFRESH CYCLE NOTE : Don t care ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D HIDDEN REFRESH CYCLE ( READ ) RAS CRP UCAS LCAS ASR ADDRESS DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D HIDDEN REFRESH CYCLE ( WRITE ) NOTE : D = OPEN OUT RAS UCAS LCAS ASR DQ0 ~ DQ7 DQ8 ~ DQ15 RAS t t RCD ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D CAS - BEFORE - RAS SELF REFRESH CYCLE NOTE : Don t care RAS UCAS LCAS DQ0 ~ DQ7 OFF DQ8 ~ DQ15 TEST MODE IN CYCLE NOTE : Don t care ...
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... K4F171611D, K4F151611D K4F171612D, K4F151612D PACKAGE DIMENSION 42 SOJ 400mil #42 #1 0.0375 (0.95) 50(44) TSOP(II) 400mil 0.034 (0.875) 1.091 (27.71) MAX 1.070 (27.19) 1.080 (27.43) 0.050 (1.27) 0.026 (0.66) 0.032 (0.81) 0.015 (0.38) 0.021 (0.53) 0.841 (21.35) MAX 0.821 (20.85) 0.829 (21.05) 0.0315 (0.80) 0.002 (0.05) 0.010 (0.25) 0.018 (0.45) CMOS DRAM Units : Inches (millimeters) 0.027 (0.69) MIN Units : Inches (millimeters) ...