STTA9012TV2 SGS-Thomson-Microelectronics, STTA9012TV2 Datasheet

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STTA9012TV2

Manufacturer Part Number
STTA9012TV2
Description
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

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MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all ”freewheel
mode” operations.
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Electrical insulation : 2500V
Capacitance : < 45pF.
Symbol
I
V
V
F(RMS)
I
I
T
FRM
FSM
RRM
RSM
T
stg
j
TURBOSWITCH
V
t
F
rr
V
I
F(AV)
(max)
RRM
(typ)
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
RMS
2 x 45A
1200V
1.85V
65ns
TM
ULTRA-FAST HIGH VOLTAGE DIODE
Parameter
tp = 5 s F = 5kHz square
tp = 10ms sinusoidal
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
STTA9012TV1
K2
K1
A2
A1
STTA9012TV1/2
ISOTOP
- 65 to + 150
TM
STTA9012TV2
Value
1200
1200
150
700
420
150
A2
K2
K1
A1
Unit
V
V
A
A
A
C
C
1/8

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STTA9012TV2 Summary of contents

Page 1

... They are particularly suitable in motor control circuitries the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. Parameter 5kHz square tp = 10ms sinusoidal STTA9012TV2 TM Value Unit 1200 V 1200 V 150 A 700 A ...

Page 2

STTA9012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Parameter R Junction to case thermal resistance th(j-c) P Conduction power dissipation 1 P Total power dissipation max Pmax = (P3 = 10% P1) STATIC ELECTRICAL CHARACTERISTICS (per diode) ...

Page 3

Fig. 1: Conduction losses versus average current (per diode). P1(W) 100 = 0 IF(av) ( Fig. 3: Relative variation of thermal impedance junction to case ...

Page 4

STTA9012TV1/2 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125 C). 1.1 S factor 1.0 0.9 IRM 0.8 0.7 Tj 100 Fig. 9: Forward recovery time versus dI confidence, per diode). tfr(ns) 1000 ...

Page 5

APPLICATION DATA The 1200V TURBOSWITCH series has been designed to provide the lowest overall power losses in all high frequency or high pulsed current operations. In such applications (Fig A to D),the way of calculating the power losses is given ...

Page 6

STTA9012TV1/2 Fig SNUBBER DIODE. PWM 1/T = t/T Fig RECTIFIER DIODE. STATIC & DYNAMIC CHARACTERISTICS . POWER LOSSES . Fig. E: STATIC CHARACTERISTICS ...

Page 7

APPLICATION DATA (Cont’d) Fig. F: TURN-OFF CHARACTERISTICS V TRANSISTOR /dt DIODE / trr = RECTIFIER dI / ...

Page 8

... Ordering type Marking STTA9012TV1 STTA9012TV1 STTA9012TV2 STTA9012TV2 Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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