STPS16045TV SGS-Thomson-Microelectronics, STPS16045TV Datasheet

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STPS16045TV

Manufacturer Part Number
STPS16045TV
Description
POWER SCHOTTKY RECTIFIER
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

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ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
* :
June 1999 - Ed: 3A
ISOTOP is a trademark of STMicroelectronics
Symbol
I
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V
Capacitance = 45 pF
V
F(RMS)
dV/dt
I
I
I
I
F(AV)
T
RRM
FSM
RSM
dPtot
RRM
Tj
stg
dTj
V
Tj (max)
F
V
I
F(AV)
(max)
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j a
1
thermal runaway condition for a diode on its own heatsink
(RMS)
2 x 80 A
150 C
0.69 V
45 V
Parameter
POWER SCHOTTKY RECTIFIER
Tc = 75 C
tp = 10 ms sinusoidal
tp = 2 s square
F = 1kHz
tp = 100 s square
= 0.5
K2
K1
Per diode
Per device
A2
A1
STPS16045TV
ISOTOP
- 55 to + 150
TM
10000
Value
125
160
900
150
45
80
2
5
V/ s
Unit
V
A
A
A
A
A
C
C
1/4

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STPS16045TV Summary of contents

Page 1

... Maximum operating junction temperature * dV/dt Critical rate of rise of reverse voltage dPtot thermal runaway condition for a diode on its own heatsink dTj Rth j a ISOTOP is a trademark of STMicroelectronics June 1999 - Ed: 3A STPS16045TV POWER SCHOTTKY RECTIFIER Parameter Per diode = 0.5 Per device sinusoidal ...

Page 2

... STPS16045TV THERMAL RESISTANCES Symbol R Junction to case th (j- (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode (Per diode) + P(diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * tp = 380 s, < evaluate the conduction losses use the following equation : ...

Page 3

... Tj=125 C Tj=25 C 100 Tj=125 C VFM(V) 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Fig. 4: Relative variation of thermal transient impedance junction to case versus pulse duration (per diode). Zth(j-c)/Rth(j-c) 1.0 0.8 = 0.5 0.6 Tc=75 C 0.4 Tc=100 C = 0.2 Tc=125 C 0.2 = 0.1 Single pulse 0.0 1E+0 1E-3 1E-2 Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). C(nF) 10.0 1.0 0 STPS16045TV T tp(s) =tp/T tp 1E-1 1E+0 5E+0 VR( 3/4 ...

Page 4

... STPS16045TV PACKAGE MECHANICAL DATA ISOTOP Type Marking STPS16045TV STPS16045TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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