AP4800M ETC-unknow, AP4800M Datasheet
AP4800M
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AP4800M Summary of contents
Page 1
... Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO-8 S Parameter Parameter 3 AP4800M BV 25V DSS R 18mΩ DS(ON Rating Units 25 ± 2 ...
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... AP4800M Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS ΔBV Breakdown Voltage Temperature Coefficient /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) Gate Threshold Voltage V GS(th) g Forward Transconductance fs I Drain-Source Leakage Current (T DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge ...
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... Fig 2. Typical Output Characteristics 1.8 I =9A D 1.6 =25 ℃ ℃ ℃ ℃ 1.4 1 0.6 -50 Fig 4. Normalized On-Resistance AP4800M Drain-to-Source Voltage ( =9A D =10V 100 Junction Temperature ( C) j v.s. Junction Temperature 10V 8.0V 6.0V =4.0V ...
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... AP4800M Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 3 2.5 2 1.5 1 0.5 0 100 125 150 100us 0.1 1ms 10ms 100ms 0.01 1s 10s DC 0.001 ...
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... SD Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 1.1 1.3 1.5 -50 Fig 12. Gate Threshold Voltage v.s. AP4800M f=1.0MHz ( 100 Junction Temperature Junction Temperature Ciss Ciss Ciss Ciss Coss Coss ...
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... AP4800M Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit V 90 THE DS OSCILLOSCOPE 0.6 x RATED THE OSCILLOSCOPE 5V 0.6 x RATED d(on) r Fig 14. Switching Time Waveform ...