F1207 Polyfet RF Devices, F1207 Datasheet
F1207
Manufacturer Part Number
F1207
Description
Manufacturer
Polyfet RF Devices
Datasheet
1.F1207.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
F1207
Manufacturer:
MOLEX
Quantity:
12 000
General Description
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
gold metal for greatly extended
lifetime. Low output capacitance
and high F enhance broadband
performance
SYMBOL
SYMBOL
VSWR
Bvdss
Idss
Igss
Vgs
gM
Rdson
Idsat
Gps
Ciss
Crss
Coss
Total
Device
Dissipation
100 Watts
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
Silicon VDMOS and LDMOS
"Polyfet"
Common Source Power Gai
Drain Efficiency
Load Mismatch Toleranc
PARAMETER
PARAMETER
Drain Breakdown Voltag
Zero Bias Drain Curren
Gate Leakage Curren
Gate Bias for Drain Curren
Forward Transconductanc
Saturation Resistanc
Saturation Curren
Common Source Input Capacitanc
Common Source Feedback Capacitanc
t
Common Source Output Capacitanc
TM
Junction to
Case Thermal
Resistance
polyfet rf devices
process features
1.75
o
C/W
Maximum
Junction
Temperature
RF CHARACTERISTICS (
200
ELECTRICAL CHARACTERISTICS (EACH SIDE)
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
o
C
-65
Storage
Temperature
MIN
MIN
POLYFET RF DEVICES
o
10
C
1
40
to 150
TYP
TYP
o
0.8
0.7
7.5
40
30
C
60
6
20
DC Drain
Current
MAX
MAX
20:1
WATTS OUTPUT )
1
1
7
4 A
SILICON GATE ENHANCEMENT MODE
Relative
UNITS
UNITS
Ohm
Amp
Mho
dB
mA
%
RF POWER
uA
pF
pF
pF
V
V
HIGH EFFICIENCY, LINEAR,
PATENTED GOLD METALIZED
HIGH GAIN, LOW NOISE
Drain to
Gate
Voltage
Idq =
Idq =
Idq =
50
20 Watts Push - Pull
TEST CONDITIONS
TEST CONDITIONS
o
Package Style AQ
Ids =
Vds =
Vds = 0 V,
Ids =
Vds = 10V, Vgs = 5V
Vgs = 20V, Ids = 8
Vgs = 20V, Vds = 10V
Vds =
Vds =
Vds =
V
0.8
0.8
0.8
0.05
12.5
A,
A,
A,
12.5
12.5
12.5
0.1
VDMOS TRANSISTOR
Vds =
Vds =
Vds =
A,
A,
V,
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
V, Vgs = 0V, F = 1 MHz
Drain to
Source
Voltage
50
REVISION
Vgs = 0V
Vgs = 0V
Vgs = 30V
Vgs = Vds
12.5
12.5
12.5
V
A
V,
V,
V,
F1207
F = 400 MHz
F = 400 MHz
F = 400 MHz
Gate to
Source
Voltage
8/1/97
30V
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F1207 Summary of contents
Page 1
... Vgs = Vds V Mho Vds = 10V, Vgs = 5V Ohm Vgs = 20V, Ids = 8 Amp Vgs = 20V, Vds = 10V pF Vds = 12.5 V, Vgs = 0V MHz pF Vds = 12.5 V, Vgs = 0V MHz pF Vds = 12.5 V, Vgs = 0V MHz REVISION F1207 Gate to Source Voltage 30V 400 MHz 400 MHz 400 MHz A 8/1/97 ...
Page 2
... POUT VS PIN GRAPH F1207 POUT VS PIN F=400 MHZ; IDQ=0.8A; VDS=12. GAIN POUT Efficiency = 45 0.5 1 1.5 2 2.5 PIN IN WATTS POUT GAIN IV CURVE F1C 1DIE IV CURVE Vds in Volts S11 AND S22 SMITH CHART 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet ...