CEF08N5 Chino-Excel Technology Corp, CEF08N5 Datasheet
CEF08N5
Related parts for CEF08N5
CEF08N5 Summary of contents
Page 1
... CEF08N5 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 500V , 4. DS(ON) Super high dense cell design for extremely low R 6 High power and current handling capability. TO-220F full-pak for through hole ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage ...
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... V =250V, D(ON 8A 10V GS Ω =9.1 D(OFF) GEN =400V 8A =10V 6-143 CEF08N5 Min Typ Max Unit mJ 500 A 8 500 V µA 25 100 Ω 0.76 0. 105 ...
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... CEF08N5 ELECTRICAL CHARACTERISTICS (T Parameter DYNAMIC CHARACTERISTICS Input Capacitance 6 Output Capacitance Reverse Transfer Capacitance DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing =10,9,8, Figure 1. Output Characteristics =25 C unless otherwise noted) ...
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... Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 4 V =50V Drain-Source Current (A) DS Figure 7. Transconductance Variation with Drain Current CEF08N5 2.2 I =4. =10V GS 1.9 1.6 1.3 1.0 0.7 0.4 -100 25 - Junction Temperature Figure 4. On-Resistance Variation with 1.15 I =250 A ...
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... CEF08N5 15 V =400V = Qg, Total Gate Charge (nC) Figure 9. Gate Charge GEN Figure 11. Switching Test Circuit 0 10 D=0.5 0 0.1 0.05 0.02 0. Figure 13. Normalized Thermal Transient Impedance Curve OUT G S Single Pulse ...