AD829JR Analog Devices Inc, AD829JR Datasheet - Page 5

IC VIDEO OPAMP LN HS 8-SOIC

AD829JR

Manufacturer Part Number
AD829JR
Description
IC VIDEO OPAMP LN HS 8-SOIC
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD829JR

Slew Rate
230 V/µs
Mounting Type
Surface Mount
Rohs Status
RoHS non-compliant
Applications
Voltage Feedback
Number Of Circuits
1
-3db Bandwidth
120MHz
Current - Supply
5.3mA
Current - Output / Channel
32mA
Voltage - Supply, Single/dual (±)
±4.5 V ~ 18 V
Package / Case
8-SOIC (0.154", 3.90mm Width)
No. Of Amplifiers
1
Bandwidth
600MHz
No. Of Pins
8
Settling Time
65ns
Operating Temperature Max
70°C
Peak Reflow Compatible (260 C)
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Internal Power Dissipation
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range
Operating Temperature Range
Lead Temperature (Soldering, 60 sec)
1
2
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL CHARACTERISTICS
Table 3.
Package Type
8-Lead PDIP (N)
8-Lead CERDIP (Q)
20-Lead LCC (E)
8-Lead SOIC (R)
Maximum internal power dissipation is specified so that T
150°C at an ambient temperature of 25°C.
If the differential voltage exceeds 6 V, external series protection resistors
should be added to limit the input current.
8-Lead PDIP (N)
8-Lead SOIC (R)
8-Lead CERDIP (Q)
20-Terminal LCC (E)
8-Lead CERDIP (Q) and 20-Terminal LCC (E)
8-Lead PDIP (N) and 8-Lead SOIC (R)
AD829J
AD829A
AD829S
θ
100 (derates at 8.7 mW/°C)
110 (derates at 8.7 mW/°C)
77
125 (derates at 6 mW/°C)
JA
2
1
Rating
18 V
1.3 W
0.9 W
1.3 W
0.8 W
±6 V
Indefinite
−65°C to +150°C
−65°C to +125°C
0°C to 70°C
−40°C to +125°C
−55°C to +125°C
300°C
J
does not exceed
Unit
°C/W
°C/W
°C/W
°C/W
Rev. H | Page 5 of 20
METALLIZATION PHOTO
ESD CAUTION
–IN
+IN
2
3
Figure 3. Metallization Photo; Contact Factory for Latest Dimensions,
OFFSET NULL
2.5
2.0
1.5
1.0
0.5
SUBSTRATE CONNECTED TO +V
0
–55 –45 –35 –25 –15 –5
Figure 4. Maximum Power Dissipation vs. Temperature
1
Dimensions Shown in Inches and (Millimeters)
CERDIP
PDIP
AMBIENT TEMPERATURE (°C)
0.067 (1.70)
SOIC
5
15 25 35 45 55 65 75 85 95 105 115
OFFSET NULL
S
LCC
8
AD829
OUTPUT
C
+V
COMP
–V
125
7
6
5
4
S
S
0.054
(1.37)

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