MBM29DL800BA-90PFTN Meet Spansion Inc., MBM29DL800BA-90PFTN Datasheet
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MBM29DL800BA-90PFTN
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MBM29DL800BA-90PFTN Summary of contents
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... For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number MBM29DL800TA/BA / -70/90 -70/90 Revision DS05-20860-7E -70/90 -70/90 MBM29DL800TA /MBM29DL800BA Cover Sheet Issue Date August 6, 2007 ...
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This page left intentionally blank MBM29DL800TA/BA_DS05-20860-7E August 6, 2007 ...
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SPANSION Flash Memory TM Data Sheet September 2003 This document specifies SPANSION Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and ...
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... When addresses remain stable, automatically switch themselves to low power mode. write inhibit ≤ 2.5 V • Low V CC • Erase Suspend/Resume Suspends the erase operation to allow a read in another sector within the same device Embedded Erase TM and Embedded Program /MBM29DL800BA -70/90 2 PROMs TM are trademarks of Advanced Micro Devices, Inc. Retired Product DS05-20860-7E_August 6, 2007 DS05-20860-7E -70/90 ...
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... Sector Protection Set function by Extended sector protection command • Fast Programming Function by Extended Command • Temporary sector unprotection Temporary sector unprotection via the RESET pin. ■ PACKAGES 48-pin plastic TSOP (1) Marking Side (FPT-48P-M19) /MBM29DL800BA -70/90 48-pin plastic TSOP (1) Marking Side (FPT-48P-M20) 48-pin plastic FBGA (BGA-48P-M12) Retired Product DS05-20860-7E_August 6, 2007 ...
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... The MBM29DL800TA/BA memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection. 6 /MBM29DL800BA -70/ the RY/BY output pin. Once the end of a program or erase cycle has been 6 Retired Product ...
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... Bank 2 Address RESET State Control WE CE Command OE Register BYTE Bank 1 Address /MBM29DL800BA -70/90 MBM29DL800TA/MBM29DL800BA +0.3 V -70 –0.3 V +0.6 V — –0 Cell Matrix (Bank 2) X-Decoder RY/BY Status X-Decoder Cell Matrix (Bank 1) Retired Product DS05-20860-7E_August 6, 2007 -70/90 — - ...
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... /MBM29DL800BA -70/90 TSOP(1) (Marking Side) MBM29DL800TA/MBM29DL800BA Normal Bend (FPT-48P-M19) (Marking Side) MBM29DL800TA/MBM29DL800BA Reverse Bend (FPT-48P-M20) Retired Product DS05-20860-7E_August 6, 2007 -70/ BYTE ...
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... /MBM29DL800BA -70/90 FBGA (Top View) Marking side ...
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... Output Enable WE Write Enable RY/BY Ready/Busy Output Hardware Reset Pin/Temporary Sector RESET Unprotection BYTE Selects 8-bit or 16-bit mode N.C. No Internal Connection V Device Ground SS V Device Power Supply CC ■ LOGIC SYMBOL 10 /MBM29DL800BA -70/90 Function RESET RY/BY BYTE Retired Product ...
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... Manufacturer and device codes may also be accessed via a command register write sequence. See “MBM29DL800TA/BA Command Definitions Table” Refer to the section on Sector Protection can 3.0 V ± 10 also used for the extended sector protection. /MBM29DL800BA -70/ ...
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... Word Mode: 555h or 2AAh to addresses A Byte Mode: AAAh or 555h to addresses A • Both Read/Reset commands are functionally equivalent, resetting the device to the read mode. • The command combinations not described in “MBM29DL800TA/BA Command Definitions Table” are illegal. 12 /MBM29DL800BA -70/90 Fourth Bus Second Bus Third Bus ...
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... Code Manufacturer’s Code 04h 4Ah A (B)* MBM29DL800TA (W) 224Ah Device Code CBh A (B)* MBM29DL800BA (W) 22CBh Sector Protection 01h (B): Byte mode (W): Word mode HI-Z: High Byte mode are High-Z and /MBM29DL800BA -70/ ...
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... Bank 1 2FFFFh 17FFFh 1FFFFh 0FFFFh 0FFFFh 07FFFh 00000h 00000h MBM29DL800BA Sector Architecture Retired Product DS05-20860-7E_August 6, 2007 -70/90 (×8) (×16) FFFFFh 7FFFFh 64 K byte EFFFFh 77FFFh 64 K byte DFFFFh 6FFFFh 64 K byte CFFFFh 67FFFh 64 K byte ...
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... MB M29DL800TA Sector Address Table (MBM29DL800BA) Sector Address Bank Bank Sector Address SA21 SA20 SA19 SA18 SA17 SA16 SA15 Bank 2 SA14 SA13 ...
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... Bank 1 SA18 SA19 SA20 SA21 Note : The address range The address range /MBM29DL800BA -70/90 Sector Address Table (MBM29DL800TA) Sector Size (Kbytes/ Kwords 64/32 00000h to 0FFFFh 64/32 10000h to 1FFFFh ...
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... Under this condition the current is consumed is less than 5 µA Max Once the RESET pin is taken high, the device requires t of wake up time before outputs are valid for read access the standby mode the outputs are in the high impedance state, independent of the OE input. /MBM29DL800BA -70/ with zero latency. 16 ...
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... IL identifier code (MBM29DL800TA = 4Ah and MBM29DL800BA = CBh for ×8 mode; MBM29DL800TA = 224Ah and MBM29DL800BA = 22CBh for ×16 mode). These two bytes/words are given in “MBM29DL800TA/BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” (in ■DEVICE BUS OPERATION) ...
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... Please note that the RY/BY output signal should be ignored during the RESET pulse. See “(9) RESET/RY/BY Timing Diagram” in ■TIMING DIAGRAM for the timing diagram. Refer to Temporary Sector Unprotection for additional functionality. /MBM29DL800BA -70/90 on address pin A ID ...
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... MBM29DL800BA = CBh for ×8 mode; MBM29DL800TA = 224Ah and MBM29DL800BA = 22CBh for ×16 mode). (See “MBM29DL800TA/BA Sector Protection Verify Autoselect Codes Table” and “Extended Autoselect Code Table” ...
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... Chip Erase Time; Sector Erase Time × All sectors + Chip Program Time (Preprogramming) Algorithm” in ■FLOW CHART illustrates the Embedded Erase “(2) Embedded Erase TM command strings and bus operations. /MBM29DL800BA -70/90 is “1” (See Write Operation Status section.) at which time the 7 Retired Product DS05-20860-7E_August 6, 2007 ...
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... Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase operation. Writing the Erase Resume command (30h) resumes the erase operation. The bank addresses of sector being erasing or suspending should be set when writting the Erase Suspend or Erase Resume command. 22 /MBM29DL800BA -70/90 Retired Product DS05-20860-7E_August 6, 2007 -70/ Sector Erase Timer ...
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... If the output data is logical “0”, please repeat to write extended sector protect command (60h) again. To terminate the operation necessary to set RESET pin /MBM29DL800BA -70/90 bit will be at logic “1”, and ...
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... Suspended (Non-Erase Suspended Sector) Mode *1 : Successive reads from the erasing or erase-suspend sector cause Reading from non-erase suspend sector address indicates logic “1” at the DQ 24 /MBM29DL800BA -70/90 is address sensitive. This means that if an address from an erasing 2 bit will toggle. However toggling in the case of [1] and [3]. In case of [2], the data toggled in the [1] and [3] ...
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... Embedded Erase Algorithm is in progress), DQ Erase Suspend mode, DQ stops toggling. Successive read cycles during the erase-suspend-program cause toggle. 6 /MBM29DL800BA -70/90 . Upon completion of the Embedded Program active for approximately 100 µs, then the bank returns to read mode. 7 output, it may read the status or valid data ...
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... When the device is in the erase 2 mode, DQ toggles if this bit is read from an erasing sector operate toggle bit function properly must be high when bank address is changed. 26 /MBM29DL800BA -70/90 )” (in ■DEVICE BUS OPERATION). and BYTE = V IL never stops toggling. Once the devices have exceeded timing limits, the 6 ...
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... Byte/Word Configuration The BYTE pin selects the byte (8-bit) mode or word (16-bit) mode for the MBM29DL800TA/BA devices. When this pin is driven high, the devices operate in the word (16-bit) mode. The data is read and programmed at DQ /MBM29DL800BA -70/ the following read cycle. ...
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... Device user is able to protect each sector individually to store and protect data. Protection circuit voids both program and erase commands that are addressed to protected sectors. Any commands to program or erase addressed to protected sector are ignored (see “Sector Protection” in ■ FUNCTIONAL DESCRIPTION) 28 /MBM29DL800BA -70/ bits are tri-stated. However, the command bus cycle is always 8 ...
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... No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. /MBM29DL800BA -70/90 Symbol Min ...
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... MAXIMUM OVERSHOOT/MAXIMUM UNDERSHOOT +0.6 V –0.5 V – +2.0 V +14.0 V +13 +0 Note : This waveform is applied for A 30 /MBM29DL800BA -70/ Figure 1 Maximum Undershoot Waveform Figure 2 Maximum Overshoot Waveform OE, and RESET. 9 Figure 3 Maximum Overshoot Waveform 2 Retired Product DS05-20860-7E_August 6, 2007 -70/90 ...
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... This timing is only for Sector Protection operation and Autoselect mode Applicable for only V applying Automatic sleep mode enables the low power mode when address remain stable for 150 ns Embedded Algorithm (program or erase progress. (@5 MHz) /MBM29DL800BA -70/90 Conditions ...
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... Input rise and fall times Input pulse levels: 0 3.0 V Timing measurement reference level Input: 1.5 V Output:1.5 V Notes including jig capacitance (MBM29DL800TA/BA-70 100 pF including jig capacitance (MBM29DL800TA/BA-90 /MBM29DL800BA -70/90 Symbols Test Setup JEDEC Standard t t — AVAV ...
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... CE Pulse Width High Byte Programming Operation Word Sector Erase Operation * 1 V Setup Time CC Rise Time Voltage Transition Time * 2 Write Pulse Width * 2 OE Setup Time to WE Active * 2 /MBM29DL800BA -70/90 Symbol -70 JEDEC Standard Min Typ — AVAV — AVWL AS — ...
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... RESET Hold Time Before Read BYTE Switching Low to Output High-Z BYTE Switching High to Output Active Program/Erase Valid to RY/BY Delay Delay Time from Embedded Output Enable *1 : This does not include the preprogramming time This timing is for Sector Protection operation. 34 /MBM29DL800BA -70/90 Symbol JEDEC Standard Min — t ...
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... FBGA PIN CAPACITANCE Parameter Input Capacitance C Output Capacitance C Control Pin Capacitance C Notes : • Test conditions T = +25° 1.0 MHz A • DQ /A- pin capacitance is stipulated by output capacitance /MBM29DL800BA -70/90 Limits Min Typ Max — — 16 360 — 8 300 — 8.4 25 — ...
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... MB M29DL800TA ■ TIMING DIAGRAM • Key to Switching Waveforms (1) AC Waveforms for Read Operations Address Outputs 36 /MBM29DL800BA -70/90 WAVEFORM INPUTS OUTPUTS Must Be Will Be Steady Steady May Will Be Change Changing from from May Will Be Change Changing from from “H” or “L” ...
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... D is the output of the data written to the device. OUT • Figure indicates last two bus cycles out of four bus cycle sequence. • These waveforms are for the ×16 mode. The addresses differ from ×8 mode. /MBM29DL800BA -70/ Address Stable t ACC ...
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... OUT • Figure indicates last two bus cycles out of four bus cycle sequence. • These waveforms are for the ×16 mode. (The addresses differ from ×8 mode.) 38 /MBM29DL800BA -70/90 3rd Bus Cycle Data Polling 555h ...
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... WP t GHWL WE t Data t VCS the sector address for Sector Erase. Addresses = 555h (Word) for Chip Erase. Note : These waveforms are for the ×16 mode. The addresses differ from ×8 mode. /MBM29DL800BA -70/90 2AAh 555h 555h WPH ...
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... AC Waveforms for Data Polling during Embedded Algorithm Operations Data Data BUSY RY/ Valid Data (The device has completed the Embedded operation /MBM29DL800BA -70/ OEH WHWH1 Output Flag 0 6 Retired Product DS05-20860-7E_August 6, 2007 -70/90 ...
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... MB M29DL800TA (7) AC Waveforms for Toggle Bit I during Embedded Algorithm Operations Address OEH /DQ Data BUSY RY/ stops toggling (The device has completed the Embedded operation). 6 /MBM29DL800BA -70/ AHT ASO AHT AS t CEPH t OEPH Toggle Toggle Toggle ...
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... MB M29DL800TA (8) RY/BY Timing Diagram during Program/Erase Operations CE WE RY/BY (9) RESET/RY/BY Timing Diagram WE RESET RY/BY 42 /MBM29DL800BA -70/90 Rising edge of the last WE pulse t BUSY READY Retired Product DS05-20860-7E_August 6, 2007 -70/90 Entire programming or erase operations t RB ...
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... ELFH (11) Timing Diagram for Byte Mode Configuration CE BYTE t ELFL (12) BYTE Timing Diagram for Write Operations BYTE /MBM29DL800BA -70/ Data Output Data Output ( ( FHQV Data Output Data Output ( ...
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... VLHT VLHT WE CE Data t VCS V CC SPAX:Sector Address for initial sector SPAY: Sector Address for next sector Note : byte mode /MBM29DL800BA -70/90 t VLHT t WPP t OESP t CSP Retired Product DS05-20860-7E_August 6, 2007 -70/90 SPAY t VLHT 01h t OE ...
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... GHWL WE Note DQ is read from the erase-suspended sector. 2 Valid DQ Output Note : This is example of Read for Bank 1 and Embedded Algorithm (program) for Bank 2. BA1: Address corresponding of Bank 1. BA2: Address corresponding of Bank 2. /MBM29DL800BA -70/90 t Program or Erase Command Sequence VLHT Unprotection period Command Read Command t t ...
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... Embedded Suspend Erasing WE Erase Toggle DQ and with read from the erase-suspended sector /MBM29DL800BA -70/90 Enter Erase Suspend Program Erase Suspend Erase Erase Suspend Read Suspend Program Retired Product DS05-20860-7E_August 6, 2007 -70/90 Erase Resume Erase Erase Read Complete ...
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... VLHT t VIDR Address Data 60h SPAX : Sector Address to be protected SPAY : Next Sector Address to be protected TIME-OUT : Time-Out window = 250 µs (Min) /MBM29DL800BA -70/90 SPAX TIME-OUT 40h 60h Retired Product DS05-20860-7E_August 6, 2007 -70/90 SPAX SPAY 01h 60h ...
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... MB M29DL800TA ■ FLOW CHART (1) Embedded Program TM Algorithm EMBEDDED ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. 48 /MBM29DL800BA -70/90 Start Write Program Command Sequence (See below) Data Polling No Verify Data ? Yes No Last Address ...
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... MB M29DL800TA (2) Embedded Erase TM Algorithm EMBEDDED ALGORITHM Chip Erase Command Sequence Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. /MBM29DL800BA -70/90 Start Write Erase Command Sequece (See below) Data Polling No Data = FFh ? Yes Erasure Completed Individual Sector/Multiple Sector ...
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... MB M29DL800TA (3) Data Polling Algorithm * : DQ is rechecked even /MBM29DL800BA -70/90 Start Read Byte ( Byte address for programming 7 0 Addr Any of the sector addresses within Yes DQ = Data Any of the sector addresses within Yes Read Byte ( Addr ...
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... MB M29DL800TA (4) Toggle Bit Algorithm *1 : Read toggle bit twice to determine whether it is toggling Recheck toggle bit because it may stop toggling as DQ /MBM29DL800BA -70/90 Start Read Addr Bank address being executed *1 Read Addr Toggle 6 ? Yes Yes ...
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... MB M29DL800TA (5) Sector Protection Algorithm Increment PLSCNT PLSCNT = 25? Remove V Write Reset Command Device Failed * : byte mode /MBM29DL800BA -70/90 Start Setup Sector Addr PLSCNT = RESET = Activate WE Pulse Time out 100 µs ...
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... MB M29DL800TA (6) Temporary Sector Unprotection Algorithm *1 : All protected sectors are unprotected All previously protected sectors are protected once again. /MBM29DL800BA -70/90 Start RESET = Perform Erase or Program Operations RESET = V IH Temporary Sector Unprotection Completed *2 Retired Product DS05-20860-7E_August 6, 2007 -70/90 53 ...
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... Extended Sector Protection Algorithm Device is Operating in Temporary Sector Unprotection Mode Increment PLSCNT No PLSCNT = 25? Yes Remove V from RESET ID Write Reset Command Device Failed 54 /MBM29DL800BA -70/90 Start RESET = V ID Wait to 4 µs No Extended Sector Protection Entry? Yes To Setup Sector Protection Write XXXh/60h PLSCNT = 1 To Sector Protection ...
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... MB M29DL800TA (8) Embedded Program TM Algorithm for Fast Mode FAST MODE ALGORITHM Increment Address Notes : • The sequence is applied for × 16 mode. • The addresses differ from × 8 mode. /MBM29DL800BA -70/90 Start 555h/AAh 2AAh/55h 555h/20h XXXh/A0h Program Address/Program Data Data Polling No Verify Data? Yes ...
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... MB M29DL800TA ■ ORDERING INFORMATION Part No. MBM29DL800TA-70PFTN MBM29DL800TA-90PFTN MBM29DL800TA-70PFTR MBM29DL800TA-90PFTR MBM29DL800TA-70PBT MBM29DL800TA-90PBT MBM29DL800BA-70PFTN MBM29DL800BA-90PFTN MBM29DL800BA-70PFTR MBM29DL800BA-90PFTR MBM29DL800BA-70PBT MBM29DL800BA-90PBT MBM29DL800 T A -70 DEVICE NUMBER/DESCRIPTION MBM29DL800 8Mega-bit (1M × 8-Bit or 512 K × 16-Bit) CMOS Flash Memory 3.0 V-only Read, Program, and Erase 56 /MBM29DL800BA -70/90 Package 48-pin plastic TSOP (1) ...
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... Note2 : Pins width and pins thickness include plating thickness. LEAD No. 1 INDEX 24 0.10(.004) "A" * 18.40 ± (.724 ± .008) 20.00 ± (.787 ± .008) 2002 FUJITSU LIMITED F48030S-c-5-6 C /MBM29DL800BA -70/90 Resin protrusion and gate protrusion are +0.15 (.006) Max (each side Details of "A" part 0.60 (.024 25 0.20 * 0.20 0.50(.020) TYP +0.03 0.17 – 0.08 +.001 .007 – ...
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... MB M29DL800TA (Continued) 48-pin plastic FBGA (BGA-48P-M12) 9.00±0.20(.354±.008) INDEX C0.25(.010) 0.10(.004) 2001 FUJITSU LIMITED B48012S-c-3 /MBM29DL800BA -70/90 +0.15 +.006 1.05 .041 –0.10 –.004 (Mounting height) 0.38±0.10(.015±.004) (Stand off) 6.00±0.20 4.00(.157) (.236±.008) Retired Product DS05-20860-7E_August 6, 2007 -70/90 5 ...
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... MB M29DL800TA Revision History Revision DS05-20860-7E(August 6, 2007) The following comment is added. This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. /MBM29DL800BA -70/90 Retired Product DS05-20860-7E_August 6, 2007 -70/90 59 ...
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... Tel: +82-2-3484-7100 Fax: +82-2-3484-7111 http://www.fmk.fujitsu.com/ F0211 © FUJITSU LIMITED Printed in Japan /MBM29DL800BA All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information and circuit diagrams in this document are presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use ...