STS3DPF30L SGS-Thomson-Microelectronics, STS3DPF30L Datasheet
STS3DPF30L
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STS3DPF30L Summary of contents
Page 1
... Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed May 2000 STripFET I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 Dual Operation Single Operation c STS3DPF30L POWER MOSFET PRELIMINARY DATA SO-8 Value Unit 1 1.6 W 1/5 ...
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... STS3DPF30L THERMAL DATA R *Thermal Resistance Junction-ambient Single Operation thj-amb Maximum Operating Junction Temperature Tj Storage Temperature Tstg (*) Mounted on FR-4 board (t ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Symbol ...
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... 4 4 (Resistive Load, see fig. 3) Test Conditions di/dt = 100 150 DD j (see test circuit, fig. 5) STS3DPF30L Min. Typ. Max. 14.5 37 5.5 1.7 1.8 Min. Typ. Max Min. Typ. Max 1.2 T.B Unit ...
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... STS3DPF30L DIM. MIN 0 0.65 b 0.35 b1 0. 4 3 4/5 SO-8 MECHANICAL DATA mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 1.27 3.81 4.0 1.27 0.6 8 (max.) inch MIN. TYP. MAX. 0.068 0.003 0.009 0.064 0.025 0.033 0.013 0.018 0.007 0.010 0.010 0.019 0.188 0.196 0.228 0.244 0.050 0.150 0.14 0.157 0.015 ...
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