M29W008T SGS-Thomson-Microelectronics, M29W008T Datasheet

no-image

M29W008T

Manufacturer Part Number
M29W008T
Description
NND - 8 MBIT (1MB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W008T
Manufacturer:
ST
0
Part Number:
M29W008T-120MS
Manufacturer:
ST
0
Part Number:
M29W008T-120N1
Manufacturer:
ST
0
Part Number:
M29W008T-120N5
Manufacturer:
ST
Quantity:
1 831
Company:
Part Number:
M29W008T-120N5
Quantity:
390
Part Number:
M29W008T-120N5F
Manufacturer:
ST
0
Part Number:
M29W008T-12N5
Manufacturer:
ST
0
DESCRIPTION
The M29W008 is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte basis
using only a single 2.7V to 3.6V V
Program and Erase operations the necessary high
voltages are generated internally. The device can
also be programmed in standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
June 1999
This is information on a product still in production but not recommended for new designs.
M29W008T and M29W008B are replaced
respectively by the M29W008AT and
M29W008AB
2.7V to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
FAST ACCESS TIME: 100ns
FAST PROGRAMMING TIME: 10 s typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Status Register bits and Ready/Busy Output
MEMORY BLOCKS
– Boot Block (Top or Bottom location)
– Parameter and Main blocks
BLOCK, MULTI-BLOCK and CHIP ERASE
MULTI BLOCK PROTECTION/TEMPORARY
UNPROTECTION MODES
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
LOW POWER CONSUMPTION
– Stand-by and Automatic Stand-by
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code, M29W008T: D2h
– Device Code, M29W008B: DCh
Erase Suspend
CC
Low Voltage Single Supply Flash Memory
supply. For
Figure 1. Logic Diagram
A0-A19
8 Mbit (1Mb x8, Boot Block)
RP
W
G
E
20
V CC
M29W008B
M29W008T
TSOP40 (N)
V SS
10 x 20 mm
M29W008B
M29W008T
NOT FOR NEW DESIGN
8
DQ0-DQ7
RB
AI02189
1/30

Related parts for M29W008T

M29W008T Summary of contents

Page 1

... M29W008T and M29W008B are replaced respectively by the M29W008AT and M29W008AB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME typical PROGRAM/ERASE CONTROLLER (P/E.C.) – Program Byte-by-Byte – Status Register bits and Ready/Busy Output MEMORY BLOCKS – ...

Page 2

... M29W008T, M29W008B Figure 2. TSOP Pin Connections A16 1 A15 A14 A13 A12 A11 M29W008T M29W008B A18 Warning Not Connected. DESCRIPTION (Cont’d) the application. Each block can be programmed and erased over 100,000 cycles. Instructions for Read/Reset, Auto Select for read- ...

Page 3

... Boot Block of 16 Kbytes, two Parameter Blocks of 8 Kbytes, one Main Block of 32 Kbytes and fifteen Main Blocks of 64 Kbytes. The M29W008T has the Boot Block at the top of the memory address space and the M29W008B locates the Boot Block starting at the bottom. The memory maps are showed in Figure 3 ...

Page 4

... M29W008T, M29W008B Figure 3A. Top Boot Block Memory Map and Block Address Table TOP BOOT BLOCK Byte-Wide FFFFFh F0000h EFFFFh 64K MAIN BLOCK E0000h DFFFFh 64K MAIN BLOCK D0000h CFFFFh 64K MAIN BLOCK C0000h BFFFFh 64K MAIN BLOCK B0000h AFFFFh 64K MAIN BLOCK ...

Page 5

... MAIN BLOCK 40000h 3FFFFh 64K MAIN BLOCK 30000h 2FFFFh 64K MAIN BLOCK 20000h 1FFFFh 64K MAIN BLOCK 10000h 0FFFFh 00000h M29W008T, M29W008B Byte-Wide 0FFFFh 32K MAIN BLOCK 08000h 07FFFh 8K PARAMETER BLOCK 06000h 05FFFh 8K PARAMETER BLOCK 04000h 03FFFh 16K BOOT BLOCK ...

Page 6

... M29W008T, M29W008B Table 3A. M29W008T Block Address Table Address Range 00000h-0FFFFh 10000h-1FFFFh 20000h-2FFFFh 30000h-3FFFFh 40000h-4FFFFh 50000h-5FFFFh 60000h-6FFFFh 70000h-7FFFFh 80000h-8FFFFh 90000h-9FFFFh A0000h-AFFFFh B0000h-BFFFFh C0000h-CFFFFh D0000h-DFFFFh E0000h-EFFFFh F0000h-F7FFFh F8000h-F9FFFh FA000h-FBFFFh FC000h-FFFFFh Output Enable (G). The Output Enable gates the outputs through the data buffers during a read operation ...

Page 7

... RP from V PLYH . The end of the (See Table 15 and Figure 9). When RP is returned IL from V will be again protected. V Supply Voltage. The power supply for all CC operations (Read, Program and Erase). Ground measurements. M29W008T, M29W008B A16 A15 A14 ...

Page 8

... M29W008T, M29W008B DEVICE OPERATIONS See Tables 4, 5 and 6. Read. Read operations are used to output the contents of the Memory Array, the Electronic Sig- nature, the Status Register or the Block Protection Status. Both Chip Enable E and Output Enable G must be low in order to read the output of the memory ...

Page 9

... M29W008T, M29W008B A6 A9 A12 A15 DQ0-DQ7 A6 A9 A12 A15 Data Output A6 A9 A12 A15 Data Input ...

Page 10

... M29W008T, M29W008B INSTRUCTIONS AND COMMANDS The Command Interface latches commands writ- ten to the memory. Instructions are made up from one or more commands to perform Read Memory Array, Read Electronic Signature, Read Block Pro- tection, Program, Block Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made of address and data sequences ...

Page 11

... Manufacturer code (20h). Address bits and A13-A19 within the Block will output the Block Protection status M29W008T, M29W008B 4th Cyc. 5th Cyc. 6th Cyc. 7th Cyc. Read Memory Array until a new write cycle is initiated. ...

Page 12

... M29W008T, M29W008B Table 9. Status Register Bits DQ Name Logic Level ’1’ ’0’ Data 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ 4 Reserved ’1’ Erase 3 Time Bit ’0’ ’-1-0-1-0-1-0-1-’ 2 Toggle Bit ...

Page 13

... Status bits DQ6 and DQ7 determine if program- ming is on-going and DQ5 allows verification of any possible error. Programming at an address not in blocks being erased is also possible during erase suspend. In this case, DQ2 will toggle at the ad- dress being programmed. M29W008T, M29W008B with while A13-A19 IL IH 13/30 ...

Page 14

... M29W008T, M29W008B Table 11. AC Measurement Conditions Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 4. AC Testing Input Output Waveform 3V 0V (1) Table 12. Capacitance (T Symbol Parameter C Input Capacitance IN C Output Capacitance OUT Note: 1. Sampled only, not 100% tested. ...

Page 15

... after the falling edge of E without increasing t GLQV M29W008T, M29W008B M29W008T / M29W008B -90 -100 = 3. 2. 30pF C = 30pF L L Min Max Min Max 90 100 90 100 ...

Page 16

... after the falling edge of E without increasing t GLQV M29W008T / M29W008B -120 -150 = 2. 2. Min Max Min Max 120 150 120 150 0 0 120 150 ...

Page 17

... Figure 6. Read Mode AC Waveforms M29W008T, M29W008B 17/30 ...

Page 18

... Read Array not necessary to program the block with 00h as the P/E.C. will do this auto- matically before to erasing to FFh. Read operations after the sixth rising edge output the status register status bits. M29W008T / M29W008B -90 -100 = 3. 2.7V to 3.6V ...

Page 19

... The Toggle bits DQ2 and DQ6 toggle during erase operation and stop when erase is completed. After completion the Status Register bit DQ5 returns ’1’ if there has been an Erase Failure. M29W008T, M29W008B M29W008T / M29W008B -120 -150 = 2. 2.7V to 3.6V ...

Page 20

... M29W008T, M29W008B Figure 7. Write AC Waveforms, W Controlled A0-A19 DQ0-DQ7 V CC tVCHEL RB Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. Erase Suspend (ES) Instruction. The Block Erase operation may be suspended by this instruc- tion which consists of writing the command B0h without any specific address ...

Page 21

... Supply Rails Normal precautions must be taken for supply volt- age decoupling; each device in a system should have the V IH close to the V widths should be sufficient to carry the V gram and erase currents required. . M29W008T, M29W008B M29W008T / M29W008B -90 -100 = 3. 2. 30pF C = 30pF L ...

Page 22

... Notes: 1. Sample only, not 100% tested. 2. This timing is for Temporary Block Unprotection operation. 22/30 Parameter V = 2.7V to 3.6V CC Min 120 500 ID 500 4 M29W008T / M29W008B -120 -150 V = 2.7V to 3.6V CC Max Min Max 150 500 500 90 90 ...

Page 23

... Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. Figure 9. Read and Write AC Characteristics, RP Related tAVAV VALID tAVEL tWLEL tGHEL tELEH tDVEH tPHEL tPHWL tPLPX tPLYH M29W008T, M29W008B tELAX tEHWH tEHGL tEHEL tEHDX VALID tEHRL tPHPHH AI02193 AI02091 23/30 ...

Page 24

... V = 3. 2. 30pF C = 30pF L L Min Max Min 10 2400 10 1.0 60 1.0 10 2400 10 1 2400 10 1.0 60 1.0 10 2400 10 1.0 60 1.0 (1) M29W008T / M29W008B -120 -150 V = 2. 2. 100pF C = 100pF L L Min Max Min 10 2400 10 1.0 60 1.0 10 2400 10 1 2400 10 1.0 60 1.0 10 2400 10 1 ...

Page 25

... Figure 10. Data Polling DQ7 AC Waveforms M29W008T, M29W008B 25/30 ...

Page 26

... Chip Erase (Preprogrammed) Chip Erase Boot Block Erase Parameter Block Erase Main Block (32Kb) Erase Main Block (64Kb) Erase Chip Program (Byte) Byte Program Program/Erase Cycles (per Block) 26/30 Figure 12. Data Toggle Flowchart PASS AI01369 M29W008T / M29W008B Min Typ 5 12 2.4 2.3 2.7 3 100,000 START READ DQ2, DQ5 & ...

Page 27

... Figure 13. Data Toggle DQ6, DQ2 AC Waveforms M29W008T, M29W008B 27/30 ...

Page 28

... M29W008T and M29W008B are replaced respectively by the new version M29W008AT and M29W008AB Devices are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you ...

Page 29

... Drawing is not to scale. mm Min Max 1.20 0.05 0.15 0.95 1.05 0.17 0.27 0.10 0.21 19.80 20.20 18.30 18.50 9.90 10.10 – – 0. DIE C M29W008T, M29W008B inches Typ Min 0.047 0.002 0.006 0.037 0.041 0.007 0.011 0.004 0.008 0.780 0.795 0.720 0.728 0.390 0.398 0.020 – 0.020 0.028 0 40 0.004 Max – ...

Page 30

... M29W008T, M29W008B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords