STP16NE06FP SGS-Thomson-Microelectronics, STP16NE06FP Datasheet

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STP16NE06FP

Manufacturer Part Number
STP16NE06FP
Description
N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Manufacturer
SGS-Thomson-Microelectronics
Datasheet

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DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size"
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
June 1998
STP16NE06
STP16NE06FP
Symbol
TYPICAL R
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
175
HIGH dV/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
I
dV/dt
V
New RDS (on) spec. starting from JULY 98
DM
V
V
V
T
P
DGR
I
I
T
ISO
GS
stg
DS
D
D
tot
TYPE
( )
j
o
C OPERATING TEMPERATURE
N - CHANNEL 60V - 0.08
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
V
60 V
60 V
= 0.08
DSS
< 0.100
< 0.100
R
DS(on)
c
Parameter
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
16 A
11 A
= 25
= 100
I
D
o
C
o
STripFET
C
(
1
) I
SD
- 16A - TO-220/TO-220FP
INTERNAL SCHEMATIC DIAGRAM
16 A, di/dt
TO-220
STP16NE06
0.4
200 A/ s, V
16
10
64
60
POWER MOSFET
1
STP16NE06FP
2
-65 to 175
3
Value
175
60
60
STP16NE06
DD
6
20
STP16NE06FP
V
(BR)DSS
PRELIMINARY DATA
2000
TO-220FP
0.2
11
64
30
7
, T
j
T
JMAX
1
W/
Unit
V/ns
o
o
2
W
V
V
V
A
A
A
V
C
C
o
3
C
1/9

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STP16NE06FP Summary of contents

Page 1

... 100 STP16NE06 STP16NE06FP POWER MOSFET PRELIMINARY DATA TO-220 TO-220FP Value STP16NE06 STP16NE06FP 0.4 0.2 2000 6 -65 to 175 175 16 A, di/dt 200 (BR)DSS Unit ...

Page 2

STP16NE06/FP THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited by ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter t Turn-on Time d(on) t Rise Time r Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain Charge gd SWITCHING OFF Symbol Parameter t Off-voltage Rise Time r(Voff) t Fall Time ...

Page 4

STP16NE06/FP Thermal Impedance for TO-220 Output Characteristics Transconductance 4/9 Thermal Impedance for TO-220FP Transfer Characteristics Static Drain-source On Resistance ...

Page 5

Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP16NE06/FP 5/9 ...

Page 6

STP16NE06/FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test ...

Page 7

TO-220 MECHANICAL DATA DIM. MIN. TYP. A 4.40 C 1.23 D 2.40 D1 1.27 E 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2.4 H2 10.0 L2 16.4 L4 13.0 L5 2.65 L6 15.25 L7 6.2 L9 3.5 ...

Page 8

STP16NE06/FP DIM. MIN. A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 8/9 TO-220FP MECHANICAL DATA mm ...

Page 9

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. ...

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