BSM300GA120DN2E3166 Eupec GmbH, BSM300GA120DN2E3166 Datasheet

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BSM300GA120DN2E3166

Manufacturer Part Number
BSM300GA120DN2E3166
Description
Manufacturer
Eupec GmbH
Datasheet
BSM300GA120DN2E3166
IGBT Power Module
Preliminary data
• Single switch
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
Type
BSM300GA120DN2E3166
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 430A
CE
I
C
1
Package
SINGLE SWITCH 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2007-A70
+ 150
± 20
1200
1200
2500
2500
0.065
430
300
860
600
0.05
F
20
11
Oct-27-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM300GA120DN2E3166 Summary of contents

Page 1

... BSM300GA120DN2E3166 IGBT Power Module Preliminary data • Single switch • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate Type BSM300GA120DN2E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Gate-emitter voltage DC collector current °C ...

Page 2

... BSM300GA120DN2E3166 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage 300 300 Zero gate voltage collector current V = 1200 1200 ...

Page 3

... BSM300GA120DN2E3166 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 3.3 Gon Rise time V = 600 3.3 Gon Turn-off delay time V = 600 - 3.3 Goff Fall time V = 600 - ...

Page 4

... BSM300GA120DN2E3166 Power dissipation tot C parameter: T 150 °C j 2600 W 2200 P 2000 tot 1800 1600 1400 1200 1000 800 600 400 200 Collector current parameter 500 A 400 I C 350 300 250 200 150 100 ...

Page 5

... BSM300GA120DN2E3166 Typ. output characteristics parameter µ ° 600 A 17V 500 15V I 13V C 450 11V 9V 7V 400 350 300 250 200 150 100 Typ. transfer characteristics parameter µ 600 A 500 ...

Page 6

... BSM300GA120DN2E3166 Typ. gate charge Gate parameter 300 A C puls 600 200 400 600 800 1000120014001600 nC 2000 Reverse biased safe operating area , 150°C Cpuls CE j parameter ± 2 Cpuls C di/dt = 1000A/µs 3000A/µ ...

Page 7

... BSM300GA120DN2E3166 Typ. switching time inductive load , T = 125° par 600 ± 100 200 300 400 Typ. switching losses inductive load , par 600 ± 140 mWs ...

Page 8

... BSM300GA120DN2E3166 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 600 T =125° 500 I F 450 400 350 300 250 200 150 100 50 0 0.0 0.5 1.0 1.5 Transient thermal impedance parameter =25°C K thJC - ...

Page 9

... BSM300GA120DN2E3166 Package Outlines Dimensions in mm Weight: 420 g Circuit Diagram 9 Oct-27-1997 ...

Page 10

Technische Information / Technical Information IGBT-Module BSM300GA120DN2 IGBT-Modules Anhang C-Serie Appendix C-series Gehäuse spezifische Werte Housing specific values Modulinduktivität stray inductance module Gehäusemaße C-Serie Package outline C-series typ sCE Appendix C-series nH Appendix_C-Serie_BSM300GA120DN2.xls 2001-09-20 ...

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