BSM10GD120DN2 Eupec GmbH, BSM10GD120DN2 Datasheet
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Manufacturer Part Number
BSM10GD120DN2
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Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2
Part Number:
BSM10GD120DN2 E
Part Number:
BSM10GD120DN2 E
Part Number:
BSM10GD120DN2 E3224
BSM 10 GD 120 DN2
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 10 GD 120 DN2
BSM 10 GD120DN2E3224
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 15A
1200V 15A
CE
I
C
1
Package
ECONOPACK 2
ECONOPACK 2K
V
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
Ordering Code
C67076-A2513-A67
C67070-A2513-A67
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
15
10
30
20
80
16
11
1.52
2
Oct-30-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec
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BSM10GD120DN2 Summary of contents
BSM 10 GD 120 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 10 GD 120 DN2 BSM 10 GD120DN2E3224 Maximum Ratings Parameter Collector-emitter voltage ...
BSM 10 GD 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 0. CE, C Collector-emitter saturation voltage °C ...
BSM 10 GD 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 150 Gon Rise time V = 600 V, ...
BSM 10 GD 120 DN2 Power dissipation = ( tot C parameter: T 150 ° tot Collector current = (T ) ...
BSM 10 GD 120 DN2 Typ. output characteristics parameter µ ° 17V 16 15V I 13V C 11V ...
BSM 10 GD 120 DN2 Typ. gate charge = ( Gate parameter puls 600 ...
BSM 10 GD 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...
BSM 10 GD 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° 0.0 0.5 1.0 ...
BSM 10 GD 120 DN2 Package Outlines Dimensions in mm Weight Circuit Diagram 9 Oct-30-1997 ...
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