APT6015JFVR Advanced Power Technology, APT6015JFVR Datasheet - Page 2

• Manufacturer Part Number: APT6015JFVR
• Manufacturer: Advanced Power Technology

DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
C
V
dv
Q
Q
I
RRM
Q
Q
(on)
(off)
SM
t
I
t
t
oss
rss
SD
iss
S
rr
gd
/
gs
r
f
g
rr
JC
JA
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -35A,
= -35A,
= -35A,
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
-4
3
SINGLE PULSE
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -35A)
10
3
4
I
I
-2
Test Conditions
D
D
See MIL-STD-750 Method 3471
Starting T
V
V
= 35A @ 25°C
= 35A @ 25°C
V
V
V
R
f = 1 MHz
V
DD
DD
DS
GS
GS
G
GS
T
T
T
T
T
T
= 1.6
= 300V
= 300V
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 25°C
= 25°C
= 125°C
= 125°C
= 125°C
= 0V
j
= +25°C, L = 4.08mH, R
10
-1
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
t 1
G
= 25 , Peak I
t 2
7500
TYP
TYP
TYP
900
320
315
125
1.6
5.5
45
15
13
45
15
27
5
t 1
/ t 2
9000
1260
MAX
APT6015JFVR
MAX
MAX
0.28
140
250
500
480
475
190
1.3
35
15
70
30
26
70
10
40
L
10
= 35A
Amps
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
ns